GTVA261802FC-V1-R2 Datasheet(PDF) - Cree, Inc

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GTVA261802FC-V1-R2 Datasheet (PDF) - Cree, Inc

GTVA261802FC-V1-R2 Datasheet PDF - Cree, Inc


No. de pieza	GTVA261802FC-V1-R2

Descarga	GTVA261802FC-V1-R2 Descarga

Tamaño del archivo	495.3 Kbytes

Page	8 Pages

Fabricante Electrónico	CREE [Cree, Inc]

Página de inicio	http://www.cree.com/

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Descripción Electrónicos

Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz

GTVA261802FC-V1-R2 Datasheet (PDF)

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GTVA261802FC-V1-R2 Datasheet PDF - Cree, Inc


No. de pieza	GTVA261802FC-V1-R2

Descarga	GTVA261802FC-V1-R2 Click to download

Tamaño del archivo	495.3 Kbytes

Page	8 Pages

Fabricante Electrónico	CREE [Cree, Inc]

Página de inicio	http://www.cree.com/

Logo

Descripción Electrónicos	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz

GTVA261802FC-V1-R2 Datasheet (HTML) - Cree, Inc

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GTVA261802FC-V1-R2 Datasheet HTML 6Page - Cree, Inc

GTVA261802FC-V1-R2 Datasheet HTML 7Page - Cree, Inc

GTVA261802FC-V1-R2 Datasheet HTML 8Page - Cree, Inc

Número de pieza similar - GTVA261802FC-V1-R2

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
WOLFSPEED, INC.	GTVA261802FC-V1-R2	536Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27

Descripción similar - GTVA261802FC-V1-R2

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Cree, Inc	GTVA261701FA	591Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 ??2690 MHz
	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
	GTVA262701FA	489Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
	GTVA262711FA	464Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTVA261701FA-V1	750Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Rev. 05.1, 2022-1-27
	GTVA262701FA_V2	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTVA261802FC	536Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27
	GTVA262701FA	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTVA262711FA	594Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 – 2690 MHz Rev. 04.4, 2022-1-27
	GTVA263202FC	632Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz Rev. 04.1, 2022-1-27

Acerca de Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Esta información es solo para fines informativos generales, no seremos responsables de ninguna pérdida o daño causado por la información anterior.

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