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AQW212 Datasheet (PDF) - Nais(Matsushita Electric Works)

AQW212 Datasheet PDF - Nais(Matsushita Electric Works)
No. de pieza AQW212
Descarga  AQW212 Descarga
Tamaño del archivo   46.75 Kbytes
Page   3 Pages
Fabricante Electrónico  NAIS [Nais(Matsushita Electric Works)]
Página de inicio  
Logo NAIS - Nais(Matsushita Electric Works)
Descripción Electrónicos GU (General Use) Type [2-Channel (Form A) Type]

AQW212 Datasheet (PDF)

Go To PDF Page Descarga Datasheet
AQW212 Datasheet PDF - Nais(Matsushita Electric Works)

No. de pieza AQW212
Descarga  AQW212 Click to download

Tamaño del archivo   46.75 Kbytes
Page   3 Pages
Fabricante Electrónico  NAIS [Nais(Matsushita Electric Works)]
Página de inicio  
Logo NAIS - Nais(Matsushita Electric Works)
Descripción Electrónicos GU (General Use) Type [2-Channel (Form A) Type]

AQW212 Datasheet (HTML) - Nais(Matsushita Electric Works)


AQW212 Detalles de producto

FEATURES

1. Compact 8-pin DIP size

The device comes in a compact (W) 6.4 × (L) 9.78 ×(H) 3.9 mm (W) .252×(L) .385×(H) .154 inch, 8-pin DIP size (through hole terminal type).

2. Applicable for 2 Form A use as well as two independent 1 Form A use

3. Controls low-level analog signals

PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.

4. High sensitivity, high speed response

Can control a maximum 0.13 A load current with a 5 mA input current. Fast operation speed of 310 µs (typical). (AQW214)

5. Low-level off state leakage current

The SSR has an off state leakage current of several milliamperes whereas the PhotoMOS relays has only 100 pA even with the rated load voltage of 400 V(AQW214).

6. Low-level thermal electromotive force (Approx. 1 µV)

7. Eliminates the need for a counter electromotive force protection diode in the drive circuits on the input side

8. Stable ON resistance.

9. Eliminates the need for a power supply to drive the power MOSFET




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