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M36W0R6040T0 Datasheet (PDF) - STMicroelectronics

M36W0R6040T0 Datasheet PDF - STMicroelectronics
No. de pieza M36W0R6040T0
Descarga  M36W0R6040T0 Descarga

Tamaño del archivo   346.99 Kbytes
Page   18 Pages
Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Descripción Electrónicos 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package

M36W0R6040T0 Datasheet (PDF)

Go To PDF Page Descarga Datasheet
M36W0R6040T0 Datasheet PDF - STMicroelectronics

No. de pieza M36W0R6040T0
Descarga  M36W0R6040T0 Click to download

Tamaño del archivo   346.99 Kbytes
Page   18 Pages
Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Descripción Electrónicos 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package

M36W0R6040T0 Datasheet (HTML) - STMicroelectronics

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M36W0R6040T0 Detalles de producto

SUMMARY DESCRIPTION

The M36W0R6040T0 and M36W0R6040B0 are Multiple Memory Products which combine two memory devices; a 64-Mbit, Multiple Bank Flash memories, the M58WR064FT/B, and a 16-Mbit Pseudo SRAM, the M69AR024B. Recommended operating conditions do not allow more than one memory to be active at the same time. The memory is offered in a Stacked TFBGA88 (8x10mm, 8x10 ball array, 0.8mm pitch) package.

In addition to the standard version, the packages are also available in Lead-free version, in compliance with JEDEC Std J-STD-020B, the ST ECO PACK 7191395 Specification, and the RoHS (Restriction of Hazardous Substances) directive.

All packages are compliant with Lead-free soldering processes.



FEATURES SUMMARY

■ MULTI-CHIP PACKAGE

   – 1 die of 64 Mbit (4Mb x 16) Flash Memory

   – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM

■ SUPPLY VOLTAGE

   – VDDF = VDDP = VDDQ = 1.7V to 1.95V

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

   – Manufacturer Code: 20h

   – Device Code (Top Flash Configuration), M36W0R6040T0: 8810h

   – Device Code (Bottom Flash Configuration), M36W0R6040B0: 8811h

■ PACKAGES

   – Compliant with Lead-Free Soldering Processes

   – Lead-Free Versions



FLASH MEMORY

■ PROGRAMMING TIME

   – 8µs by Word typical for Fast Factory Program

   – Double/Quadruple Word Program option

   – Enhanced Factory Program options

■ MEMORY BLOCKS

   – Multiple Bank Memory Array: 4 Mbit Banks

   – Parameter Blocks (Top location)

■ SYNCHRONOUS / ASYNCHRONOUS READ

   – Synchronous Burst Read mode: 66MHz

   – Asynchronous/ Synchronous Page Read mode

   – Random Access: 70ns

■ DUAL OPERATIONS

   – Program Erase in one Bank while Read in others

   – No delay between Read and Write operations

■ BLOCK LOCKING

   – All blocks locked at Power-up

   – Any combination of blocks can be locked

   – WPF for Block Lock-Down

■ SECURITY

   – 128-bit user programmable OTP cells

   – 64-bit unique device number

■ COMMON FLASH INTERFACE (CFI)

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK



PSRAM

■ ACCESS TIME: 70ns

■ LOW STANDBY CURRENT: 110µA

■ DEEP POWER DOWN CURRENT: 10µA



 




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Acerca de STMicroelectronics


STMicroelectronics es un fabricante multinacional de electrónica y semiconductores con sede en Ginebra, Suiza.

La compañía ofrece una amplia gama de productos que incluyen microcontroladores, sensores, amplificadores de energía y circuitos integrados para diversas aplicaciones en los mercados automotrices, industriales y de consumo.

Fundada en 1987, Stmicroelectronics tiene operaciones en más de 100 países y es una de las compañías semiconductores más grandes del mundo.

*Esta información es solo para fines informativos generales, no seremos responsables de ninguna pérdida o daño causado por la información anterior.




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