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K6R1016C1C Datasheet (PDF) - Samsung semiconductor

K6R1016C1C Datasheet PDF - Samsung semiconductor
No. de pieza K6R1016C1C
Descarga  K6R1016C1C Descarga

Tamaño del archivo   190.94 Kbytes
Page   11 Pages
Fabricante Electrónico  SAMSUNG [Samsung semiconductor]
Página de inicio  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Descripción Electrónicos 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).

K6R1016C1C Datasheet (PDF)

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K6R1016C1C Datasheet PDF - Samsung semiconductor

No. de pieza K6R1016C1C
Descarga  K6R1016C1C Click to download

Tamaño del archivo   190.94 Kbytes
Page   11 Pages
Fabricante Electrónico  SAMSUNG [Samsung semiconductor]
Página de inicio  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Descripción Electrónicos 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).

K6R1016C1C Datasheet (HTML) - Samsung semiconductor

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K6R1016C1C Detalles de producto

GENERAL DESCRIPTION
The K6R1016C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016C1C uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle.

FEATURES
• Fast Access Time 10,12,15ns(Max.)
• Low Power Dissipation Standby (TTL) : 30mA(Max.) (CMOS) : 5mA(Max.) 0.5mA(Max.) L-ver. only
    Operating K6R1016C1C-10 : 105mA(Max.) K6R1016C1C-12 : 95mA(Max.) K6R1016C1C-15 : 93mA(Max.)
• Single 5.0V±10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation
    - No Clock or Refresh required
• Three State Outputs
• 2V Minimum Data Retention: L-ver. only
• Center Power/Ground Pin Configuration
• Data Byte Control: LB: I/O1~ I/O8, UB: I/O9~ I/O16
• Standard Pin Configuration:
    K6R1016C1C-J : 44-SOJ-400
    K6R1016C1C-T: 44-TSOP2-400BF
    K6R1016C1C-F: 48-Fine pitch BGA with 0.75 Ball pitch
   




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