Description
The TC55VEM208ASTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz (typ) and a minimum cycle time of 40 ns. It is automatically placed in low-power mode at 0.7 µA standby current (typ) when chip enable (CE ) is asserted high. There are two control inputs. CE is used to select the device and for data retention control, and output enable ( OE ) provides fast memory access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. The TC55VEM208ASTN is available in a plastic 32-pin thin-small-outline package (TSOP).

Features
■ Low-power dissipation
■ Operating: 9 mW/MHz (typical)
■ Single power supply voltage of 2.3 to 3.6 V
■ Power down features usingCE
■ Data retention supply voltage of 1.5 to 3.6 V
■ Direct TTL compatibility for all inputs and outputs
■ Wide operating temperature range of −40° to 85°C
■ Standby Current (maximum): 3.6 V 10 µA 3.0 V 5 µA