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TC58256AFT Datasheet (PDF) - Toshiba Semiconductor

TC58256AFT Datasheet PDF - Toshiba Semiconductor
No. de pieza TC58256AFT
Descarga  TC58256AFT Descarga

Tamaño del archivo   345.55 Kbytes
Page   33 Pages
Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Descripción Electrónicos 256-MBIT (32M X 8 BITS) CMOS NAND E2PROM

TC58256AFT Datasheet (PDF)

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TC58256AFT Datasheet PDF - Toshiba Semiconductor

No. de pieza TC58256AFT
Descarga  TC58256AFT Click to download

Tamaño del archivo   345.55 Kbytes
Page   33 Pages
Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Descripción Electrónicos 256-MBIT (32M X 8 BITS) CMOS NAND E2PROM

TC58256AFT Datasheet (HTML) - Toshiba Semiconductor

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TC58256AFT Detalles de producto

DESCRIPTION
The TC58256A is a single 3.3 V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes x 32 pages x 2048 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes x 512 bytes: 528 bytes x 32 pages). The TC58256A is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras d other systems which require high-density non-volatile memory data storage.

FEATURES
● Organization
   Memory cell allay 528 x 64K x 8
   Register 528 x 8
   Page size 528 bytes
   Block size (16K x 512) bytes
●  Modes
   Read, Reset, Auto Page Program
   Auto Block Erase, Status Read
●  Mode control
   Serial input/output
   Command control
● Power supply VCC = 2.7 V to 3.6 V
● Program/Erase Cycles 1E5 cycle (with ECC)
● Access time
   Cell array to register 25 ㎲ max
   Serial Read Cycle 50 ns min
● Operating current
   Read (50 ns cycle) 10 mA typ.
   Program (avg.) 10 mA typ.
   Erase (avg.) 10 mA typ.
   Standby 100 ㎂
● Package
    TSOPI48-P-1220-0.50 (Weight: 0.53 g typ.)




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