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STN4438 Datasheet (PDF) Download - Stanson Technology

No. de pieza	STN4438

Descripción Electrónicos	STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

Tamaño del archivo	269.28 Kbytes

Html View	1 2 3 4 5 6

Fabricante Electrónico	STANSON [Stanson Technology]

Página de inicio	http://www.stansontech.com

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STN4438 Datasheet (PDF) - Stanson Technology

Número de pieza similar - STN4438

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
VBsemi Electronics Co.,...	STN4438	995Kb / 9P	N-Channel 60-V (D-S) MOSFET
EVER SEMICONDUCTOR CO.,...	STN4438	891Kb / 6P	8.2A N Channel Enhancement Mode MOSFET Rev:2023A2

Descripción similar - STN4438

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Stanson Technology	ST2304SRG	630Kb / 6P	ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST3406SRG	325Kb / 6P	ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN1810	966Kb / 7P	STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4346	352Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4392	383Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4416	966Kb / 6P	STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4426	362Kb / 6P	STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4480	742Kb / 6P	STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4546	363Kb / 6P	STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4850	532Kb / 6P	STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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