# isc Silicon PNP Power Transistor 2SB874

## Description

· V(BR)CEO: -60V (min)
· VCE(sat): -1.0V (max) @ IC = -1.5A
· Complement to Type 2SD1177

## Applications

· Low frequency power amplifier applications

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	-100	V
VCEO	Collector-Emitter Voltage	-60	V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current-Continuous	-2	A
ICM	Collector Current-Peak	-3	A
PC	Total Power Dissipation (@ TC=25℃)	20	W
TJ	Junction Temperature	150	℃
Tstg	Storage Temperature Range	-55~150	℃

## Electrical Characteristics (TC=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
V(BR)CEO	Collector-Emitter Breakdown Voltage	IC= -10mA; RBE= ∞	-60			V
V(BR)CBO	Collector-Base Breakdown Voltage	IC= -1mA; IE= 0	-100			V
V(BR)EBO	Emitter-Base Breakdown Voltage	IE= -1mA; IC= 0	-5			V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= -1.5A; IB= -0.15A		-1.0		V
VBE(on)	Base-Emitter On Voltage	IC= -2A; VCE= -5V		-1.4		V
ICBO	Collector Cutoff Current	VCB= -80V; IE= 0		-1.0		μ A
IEBO	Emitter Cutoff Current	VEB= -5V; IC= 0		-1.0		μ A
hFE-1	DC Current Gain	IC= -0.5A; VCE= -5V	60		200
hFE-2	DC Current Gain	IC= -2A; VCE= -5V	40
COB	Collector Output Capacitance	IE= 0; VCB= -10V; f= 1MHz		50		pF

## hFE-1 Classifications

B	C
60-120	100-200