Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Renesas Technology Corp |
NX5313
|
220Kb/9P |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
NX5313EH
|
220Kb/9P |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs |
NX5313EH
|
162Kb/4P |
1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
|
NX5313EK
|
162Kb/4P |
1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
|
Renesas Technology Corp |
NX5313EK
|
220Kb/9P |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs |
NX5315
|
349Kb/5P |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
|
Renesas Technology Corp |
NX5315EH
|
263Kb/11P |
LASER DIODE
2006 |
California Eastern Labs |
NX5315EH
|
283Kb/7P |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
NX5315EH-AZ
|
349Kb/5P |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
|
NX5315EH-AZ
|
283Kb/7P |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
NX5315EH
|
283Kb/7P |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
NX5315EK-AZ
|
349Kb/5P |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
|
NX5317
|
338Kb/9P |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
NX5317EE-AZ
|
338Kb/9P |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
NX5317EH-AZ
|
338Kb/9P |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|