| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Adam Technologies, Inc. |
2SH-K-XX-MTR-HF
|
85Kb/1P |
SHROUDED HEADER
|
|
2SH-K-XX-TR
|
81Kb/1P |
SHROUDED HEADER
|
|
2SH-K-XX-TS
|
74Kb/1P |
SHROUDED HEADER
|
 Hitachi Semiconductor |
2SH11
|
41Kb/8P |
Silicon N-Channel IGBT
|
|
2SH12
|
43Kb/8P |
Silicon N-Channel IGBT
|
|
2SH13
|
43Kb/8P |
Silicon N-Channel IGBT
|
|
2SH14
|
43Kb/8P |
Silicon N-Channel IGBT
|
|
2SH15
|
43Kb/8P |
Silicon N-Channel IGBT
|
|
2SH16
|
42Kb/8P |
Silicon N-Channel IGBT
|
|
2SH17
|
41Kb/8P |
Silicon N-Channel IGBT
|
|
2SH18
|
43Kb/8P |
Silicon N-Channel IGBT
|
|
2SH19
|
43Kb/8P |
Silicon N-Channel IGBT
|
|
2SH20
|
43Kb/8P |
Silicon N-Channel IGBT
|
 Toshiba Semiconductor |
2SH20
|
146Kb/4P |
SILICON P EMITTER PLANAR TYPE
|
 Hitachi Semiconductor |
2SH21
|
43Kb/8P |
Silicon N-Channel IGBT
|
 Toshiba Semiconductor |
2SH21
|
146Kb/4P |
SILICON P EMITTER PLANAR TYPE
|
 Hitachi Semiconductor |
2SH22
|
42Kb/8P |
Silicon N-Channel IGBT
|
|
2SH26
|
43Kb/8P |
Silicon N Channel IGBT High Speed Power Switching
|
 Renesas Technology Corp |
2SH26
|
171Kb/10P |
Silicon N Channel IGBT High Speed Power Switching
|
 Hitachi Semiconductor |
2SH27
|
42Kb/8P |
Silicon N Channel IGBT High Speed Power Switching
|