Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Cystech Electonics Corp... |
MTB080C10Q8
|
475Kb/12P |
N- and P-channel enhancement mode power MOSFET
|
MTB080C10Q8-0-T3-G
|
475Kb/12P |
N- and P-channel enhancement mode power MOSFET
|
MTB080N15J3
|
416Kb/9P |
N -Channel Enhancement Mode Power MOSFET
|
MTB080N15J3-0-T3-G
|
416Kb/9P |
N -Channel Enhancement Mode Power MOSFET
|
MTB080P06J3
|
501Kb/9P |
P-Channel Enhancement Mode Power MOSFET
|
MTB080P06J3-0-T3-G
|
501Kb/9P |
P-Channel Enhancement Mode Power MOSFET
|
MTB080P06L3
|
476Kb/9P |
P-Channel Enhancement Mode Power MOSFET
|
MTB080P06L3-0-T3-G
|
476Kb/9P |
P-Channel Enhancement Mode Power MOSFET
|
MTB080P06M3
|
433Kb/9P |
P-Channel Enhancement Mode MOSFET
|
MTB080P06M3-0-T2-G
|
433Kb/9P |
P-Channel Enhancement Mode MOSFET
|
MTB080P06N3
|
461Kb/9P |
P-Channel Enhancement Mode MOSFET
|
MTB080P06N3-0-T1-G
|
461Kb/9P |
P-Channel Enhancement Mode MOSFET
|
MTB080P06N6
|
518Kb/9P |
P-Channel Enhancement Mode Power MOSFET
|
MTB080P06N6-0-T1-G
|
518Kb/9P |
P-Channel Enhancement Mode Power MOSFET
|
MTB080P06Q8
|
462Kb/9P |
P-Channel Enhancement Mode Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
MTB080P06Q8
|
1Mb/4P |
P-Channel MOSFET uses advanced trench technology
|
Cystech Electonics Corp... |
MTB080P06Q8-0-T3-G
|
462Kb/9P |
P-Channel Enhancement Mode Power MOSFET
|