| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
DONGGUAN YOU FENG WEI E... |
20N60A
|
833Kb/6P |
20A 600V N-channel enhanced field effect transistor
|
Fairchild Semiconductor |
20N60A4
|
908Kb/8P |
600V, SMPS Series N-Channel IGBTs
|
ON Semiconductor |
20N60A4D
|
388Kb/10P |
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V
April, 2020 - Rev. 3 |
Fairchild Semiconductor |
20N60A4D
|
157Kb/9P |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
|
IXYS Corporation |
20N60B
|
114Kb/4P |
HiPerFAST IGBT
|
|
20N60BD1
|
54Kb/2P |
HiPerFAST IGBT with Diode
|
Infineon Technologies A... |
20N60C2
|
163Kb/14P |
Cool MOS??Power Transistor
2002-08-12 |
Intersil Corporation |
20N60C3
|
81Kb/7P |
45A, 600V, UFS Series N-Channel IGBT
January 2000 |
Infineon Technologies A... |
20N60C3
|
314Kb/14P |
Cool MOS Power Transistor
2003-10-08 |
Hitachi Semiconductor |
20N60CFD
|
50Kb/1P |
HITACHI Encapsulation, DIP 16
|
Infineon Technologies A... |
20N60CFD
|
293Kb/12P |
CoolMOS Power Transistor
Rev. 1.2 2006-05-15 |
|
20N60CFD
|
654Kb/12P |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated
Rev. 1.3 2009-12-22 |
|
20N60CFD
|
471Kb/12P |
CoolMOS Power Transistor
Rev. 1.3 2010-12-21 |
Unisonic Technologies |
20N60G-T3P-T
|
176Kb/3P |
20A, 600V N-CHANNEL POWER MOSFET
|
|
20N60G-T3P-T
|
207Kb/3P |
N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING
|
|
20N60G-T47-T
|
176Kb/3P |
20A, 600V N-CHANNEL POWER MOSFET
|
|
20N60G-T47-T
|
207Kb/3P |
N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING
|
|
20N60L-T3P-T
|
207Kb/3P |
N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING
|
|
20N60L-T3P-T
|
176Kb/3P |
20A, 600V N-CHANNEL POWER MOSFET
|
|
20N60L-T47-T
|
176Kb/3P |
20A, 600V N-CHANNEL POWER MOSFET
|
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