Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
SamHop Microelectronics... |
STS2300S
|
820Kb/8P
|
N-Channel E nhancement Mode Field Effect Transistor
|
Search Partnumber :
Start with "STS2300S" -
Total : 29 ( 1/2 Page) |
SamHop Microelectronics... |
STS2300
|
591Kb/7P |
N-Channel E nhancement Mode Field EffectTransistor
|
STS2301
|
593Kb/7P |
P-Channel E nhancement Mode Field Effect Transistor
|
VBsemi Electronics Co.,... |
STS2301
|
471Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
SamHop Microelectronics... |
STS2301A
|
107Kb/7P |
Super high dense cell design for low RDS(ON).
|
VBsemi Electronics Co.,... |
STS2301A
|
471Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
SamHop Microelectronics... |
STS2302A
|
109Kb/7P |
Super high dense cell design for low RDS(ON).
|
STS2302S
|
806Kb/8P |
N-Channel E nhancement Mode Field Effect Transistor
|
STS2305
|
110Kb/7P |
Super high dense cell design for low RDS(ON).
|
STS2305A
|
174Kb/7P |
Super high dense cell design for low RDS(ON).
|
VBsemi Electronics Co.,... |
STS2305A
|
1Mb/9P |
P-Channel 20-V (D-S) MOSFET
|
STS2306
|
1Mb/9P |
N-Channel 20 V (D-S) MOSFET
|
SamHop Microelectronics... |
STS2306
|
646Kb/7P |
N-Channel E nhancement Mode Field Effect Transistor
|
STS2306A
|
145Kb/7P |
S uper high dense cell design for low R DS (ON).
|
STS2306E
|
141Kb/7P |
S uper high dense cell design for low R DS (ON).
|
STS2307
|
591Kb/7P |
P-Channel E nhancement Mode Field Effect Transistor
|
VBsemi Electronics Co.,... |
STS2307
|
471Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
STS2307A
|
471Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
SamHop Microelectronics... |
STS2307A
|
718Kb/7P |
P-Channel E nhancement Mode Field Effect Transistor
|