Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
STMicroelectronics |
STD6NF10
|
333Kb/14P
|
N-channel 100 V, 0.22 廓, 6 A, DPAK, IPAK low gate charge STripFET??Power MOSFET
|
Search Partnumber :
Start with "STD6NF10_08" -
Total : 28 ( 1/2 Page) |
VBsemi Electronics Co.,... |
STD6NF10-1
|
1Mb/9P |
N-Channel 100-V (D-S) MOSFET
|
STMicroelectronics |
STD6NF10T4
|
333Kb/14P |
N-channel 100 V, 0.22 廓, 6 A, DPAK, IPAK low gate charge STripFET??Power MOSFET
|
VBsemi Electronics Co.,... |
STD6NF10T4
|
1,010Kb/7P |
N-Channel 100 V (D-S) MOSFET
|
STMicroelectronics |
STD6N10
|
171Kb/10P |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
|
STD6N52K3
|
249Kb/12P |
N-channel 525 V, 1 廓, 5 A, DPAK, TO-220FP SuperMESH3??Power MOSFET
|
STD6N52K3
|
1Mb/22P |
Extremely high dv/dt capability
March 2011 Rev 2 |
STD6N60M2
|
1Mb/21P |
Extremely low gate charge
May 2016 Rev 3 |
STD6N62K3
|
433Kb/17P |
N-channel 620 V, 1.1 廓, 5.5 A, IPAK, DPAK, TO-220,TO-220FP SuperMESH3??Power MOSFET
|
STD6N62K3
|
1Mb/19P |
Very low intrinsic capacitance
December 2011 Rev 1 |
STD6N65M2
|
898Kb/23P |
Zener-protected
August 2014 Rev 1 |
SHENZHEN DOINGTER SEMIC... |
STD6N65M2
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
STMicroelectronics |
STD6N80K5
|
1Mb/26P |
Zener-protected
March 2015 Rev 3 |
STD6N90K5
|
825Kb/16P |
Ultra-low gate charge
November 2016 Rev 1 |
Inchange Semiconductor ... |
STD6N95K5
|
248Kb/2P |
Isc N-Channel MOSFET Transistor
|
STMicroelectronics |
STD6N95K5
|
1Mb/23P |
N-channel 950 V, 1 廓 typ., 9 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK
|
STD6NC40
|
272Kb/9P |
N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh?줚I MOSFET
|
STD6NC40-1
|
272Kb/9P |
N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh?줚I MOSFET
|
STD6NC40-T4
|
272Kb/9P |
N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh?줚I MOSFET
|
STD6NC401
|
272Kb/9P |
N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh?줚I MOSFET
|