| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
SeCoS Halbleitertechnol... |
SSG4512CE
|
3Mb/7P
|
N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m
|
SHENZHEN DOINGTER SEMIC... |
SSG4512CE
|
2Mb/8P
|
P-Chanel and N-Channel MOSFET use advanced trench technology
|
VBsemi Electronics Co.,... |
SSG4512CE
|
2Mb/14P
|
N- and P-Channel 30 V (D-S) MOSFET
|
SeCoS Halbleitertechnol... |
SSG4512CE
|
3Mb/7P
|
N & P-Ch Enhancement Mode Power MOSFET
|
| Search Partnumber :
Start with "SSG4512CE" -
Total : 42 ( 1/3 Page) |
SeCoS Halbleitertechnol... |
SSG4512CE
|
3Mb/7P |
N & P-Ch Enhancement Mode Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
SSG4510
|
2Mb/7P |
N-Channel and P-Channel MOSFET use advanced trench Technology
|
SeCoS Halbleitertechnol... |
SSG4510
|
1Mb/7P |
N & P-Ch Enhancement Mode Power MOSFET
|
|
SSG4510
|
1Mb/7P |
N & P-Ch Enhancement Mode Power MOSFET
|
|
SSG4501
|
841Kb/9P |
Enhancement Mode Power Mos.FET
|
SHENZHEN DOINGTER SEMIC... |
SSG4501
|
2Mb/8P |
P-Chanel and N-Channel MOSFET use advanced trench technology
|
SeCoS Halbleitertechnol... |
SSG4501-C
|
1Mb/9P |
N & P-Ch Enhancement Mode Power MOSFET
|
|
SSG4501
|
881Kb/9P |
Enhancement Mode Power Mos.FET
|
|
SSG4502C
|
1Mb/6P |
N & P-Ch Enhancement Mode Power MOSFET
|
|
SSG4502CE
|
3Mb/7P |
N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
|
|
SSG4502CE
|
3Mb/7P |
N & P-Ch Enhancement Mode Power MOSFET
|
|
SSG4502C
|
1Mb/6P |
N & P-Ch Enhancement Mode Power MOSFET
|
|
SSG4503
|
1Mb/7P |
Enhancement Mode Power Mos.FET
|
|
SSG4503A
|
1Mb/7P |
Enhancement Mode Power Mos.FET
|
|
SSG4503A-C
|
631Kb/7P |
N & P-Ch Enhancement Mode Power MOSFET
|
|
SSG4503J
|
411Kb/5P |
N & P-Ch Enhancement Mode Power MOSFET
|
Spanish ▼ 
English
Chinese
German
Japanese
Russian
Korean
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand