| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
SeCoS Halbleitertechnol... |
SSD50N06-15D
|
387Kb/4P
|
N-Ch Enhancement Mode Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
SSD50N06-15D
|
2Mb/5P
|
N-Channel MOSFET uses advanced trench technology
|
| Search Partnumber :
Start with "SSD50N06-15D" -
Total : 15 ( 1/1 Page) |
SeCoS Halbleitertechnol... |
SSD50N06J
|
396Kb/3P |
N-Ch Enhancement Mode Power MOSFET
|
|
SSD50N06
|
502Kb/4P |
N-Ch Enhancement Mode Power MOSFET
|
VBsemi Electronics Co.,... |
SSD50N03
|
1,019Kb/8P |
N-Channel 30-V (D-S) MOSFET
|
SeCoS Halbleitertechnol... |
SSD50N03-C
|
240Kb/4P |
N-Ch Enhancement Mode Power MOSFET
|
|
SSD50N03J
|
213Kb/3P |
N-Ch Enhancement Mode Power MOSFET
|
|
SSD50N03
|
340Kb/4P |
N-Ch Enhancement Mode Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
SSD50N08-14D
|
1Mb/4P |
N-Channel MOSFET uses advanced SGT technology
|
SeCoS Halbleitertechnol... |
SSD50N08-14D
|
474Kb/4P |
N-Ch Enhancement Mode Power MOSFET
|
|
SSD50N08
|
474Kb/4P |
N-Ch Enhancement Mode Power MOSFET
|
|
SSD50N10
|
574Kb/4P |
N-Ch Enhancement Mode Power MOSFET
|
VBsemi Electronics Co.,... |
SSD50N10
|
987Kb/8P |
N-Channel 100-V (D-S) MOSFET
|
SeCoS Halbleitertechnol... |
SSD50N10-18D
|
469Kb/4P |
N-Ch Enhancement Mode Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
SSD50N10-18D
|
1Mb/5P |
N-Channel MOSFET uses advanced SGT technology
|
SeCoS Halbleitertechnol... |
SSD50N10
|
574Kb/4P |
N-Ch Enhancement Mode Power MOSFET
|
Laird Tech Smart Techno... |
SSD50NBT
|
2Mb/45P |
This document describes key hardware aspects of the Laird SSD50NBT system in package
|
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