| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
OSRAM GmbH |
SPLE03N81S9
|
231Kb/7P
|
Aktiv gekulter Diodenlaser-Barren, 450 W qcw bei 808 nm
|
| Search Partnumber :
Start with "SPLE03N81S9" -
Total : 10 ( 1/1 Page) |
OSRAM GmbH |
SPLE03N81G2
|
231Kb/7P |
Aktiv gekulter Diodenlaser-Barren, 180 W cw bei 808 nm
|
|
SPLE03N91G2
|
231Kb/7P |
Aktiv gekuhlter Diodenlaser-Barren, 180 W cw bei 915 nm
|
|
SPLE01N81G2
|
221Kb/7P |
Aktiv gekulter Diodenlaser-Barren, 60 W cw bei 808 nm
|
|
SPLE01N94G2
|
222Kb/7P |
Aktiv gekuhlter Diodenlaser-Barren, 60 W cw bei 940nm
|
|
SPLE01N98G2
|
221Kb/7P |
Aktiv gekulter Diodenlaser-Barren, 60 W cw bei 975 nm
|
|
SPLE01Y81G2
|
221Kb/7P |
Aktiv gekulter Diodenlaser-Barren, 60 W cw bei 808 nm
|
|
SPLE10N81G2
|
229Kb/7P |
Actively Cooled Diode Laser Bar, 600 W cw at 808 nm
|
|
SPLE10N94G2
|
229Kb/7P |
Actively Cooled Diode Laser Bar, 600 W cw at 940 nm
|
|
SPLE20N81G2
|
229Kb/7P |
Actively Cooled Diode Laser Bar, 1200 W cw at 808 nm
|
Vishay Siliconix |
SPLEADFHIGPOWTABTERM
|
227Kb/3P |
Custom Capabilities Lead Formed, High Powered, Tab Terminations, Quick Connect Wirewound Resistors
01-Jan-2022 |
Spanish ▼ 
English
Chinese
German
Japanese
Russian
Korean
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand