Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Infineon Technologies A... |
SPD30N08S2L-21
|
263Kb/8P
|
OptiMOS Power-Transistor
2003-05-09
|
Search Partnumber :
Start with "SPD30N08S2L-21" -
Total : 31 ( 1/2 Page) |
Infineon Technologies A... |
SPD30N08S2-22
|
265Kb/8P |
OptiMOS Power-Transistor
2003-05-09 |
SPD30N03
|
111Kb/8P |
SIPMOS횘 Power Transistor
05.99 |
Siemens Semiconductor G... |
SPD30N03L
|
96Kb/9P |
SIPMOS Power Transistor
|
Inchange Semiconductor ... |
SPD30N03S2L
|
334Kb/2P |
N-Channel MOSFET Transistor
|
Infineon Technologies A... |
SPD30N03S2L-07
|
658Kb/9P |
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated
02-09-2008 |
SPD30N03S2L-07
|
510Kb/8P |
OptiMOSa Power-Transistor
Rev. 2.1 2005-02-14 |
VBsemi Electronics Co.,... |
SPD30N03S2L-07
|
510Kb/8P |
N-Channel 30-V (D-S) MOSFET
|
Infineon Technologies A... |
SPD30N03S2L-07
|
260Kb/8P |
OptiMOS Power-Transistor
2003-05-09 |
SPD30N03S2L-07G
|
658Kb/9P |
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated
02-09-2008 |
SPD30N03S2L-07
|
658Kb/9P |
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated
02-09-2008 |
VBsemi Electronics Co.,... |
SPD30N03S2L-08
|
1,020Kb/8P |
N-Channel 30-V (D-S) MOSFET
|
Infineon Technologies A... |
SPD30N03S2L-10
|
637Kb/9P |
OptiMOS Power-Transistor Feature N-Channel Enhancement mode
02-09-2008 |
VBsemi Electronics Co.,... |
SPD30N03S2L-10
|
1,020Kb/8P |
N-Channel 30-V (D-S) MOSFET
|
Infineon Technologies A... |
SPD30N03S2L-10
|
256Kb/8P |
OptiMOS Power-Transistor
2003-04-24 |
SPD30N03S2L-10G
|
637Kb/9P |
OptiMOS Power-Transistor
02-09-2008 |
VBsemi Electronics Co.,... |
SPD30N03S2L-10G
|
1,020Kb/8P |
N-Channel 30-V (D-S) MOSFET
|
Infineon Technologies A... |
SPD30N03S2L-10
|
637Kb/9P |
OptiMOS Power-Transistor Feature N-Channel Enhancement mode
02-09-2008 |
SPD30N03S2L-20
|
687Kb/9P |
OptiMOS Power-Transistor Feature Enhancement mode Logic Level
02-09-2008 |
SPD30N03S2L-20
|
261Kb/8P |
OptiMOS Power-Transistor
2003-04-24 |