Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Infineon Technologies A... |
SPA16N50C3
|
363Kb/13P
|
Cool MOS??Power Transistor
Rev. 2.1 2004-04-07
|
SPA16N50C3
|
1Mb/14P
|
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
Rev. 3.0 2007-08-30
|
SPA16N50C3
|
729Kb/14P
|
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
Rev. 3.2 2009-12-22
|
Inchange Semiconductor ... |
SPA16N50C3
|
294Kb/2P
|
Isc N-Channel MOSFET Transistor
|
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Start with "SPA16N50C3" -
Total : 94 ( 1/5 Page) |
Cornell Dubilier Electr... |
SPA101M04R
|
229Kb/3P |
Solid Polymer Aluminum SMT Capacitors
|
SPA101M04R
|
274Kb/4P |
Long Life ??No dry out failure related mechanism
|
SPA101M0ER
|
229Kb/3P |
Solid Polymer Aluminum SMT Capacitors
|
SPA101M0ER
|
274Kb/4P |
Long Life ??No dry out failure related mechanism
|
C&K Components |
SPA10AB
|
145Kb/2P |
Single In-line Package Switches
|
SPA10B
|
145Kb/2P |
Single In-line Package Switches
|
RF Micro Devices |
SPA1118Z
|
436Kb/6P |
850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS
|
SPA1118Z-EVB1
|
436Kb/6P |
850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS
|
SPA1118ZSQ
|
436Kb/6P |
850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS
|
SPA1118ZSR
|
436Kb/6P |
850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS
|
Infineon Technologies A... |
SPA11N60C2
|
160Kb/14P |
Cool MOS??Power Transistor
2002-08-12 |
VBsemi Electronics Co.,... |
SPA11N60C3
|
1Mb/9P |
N-Channel 650V (D-S)Power MOSFET
|
Inchange Semiconductor ... |
SPA11N60C3
|
314Kb/2P |
isc N-Channel MOSFET Transistor
|
Infineon Technologies A... |
SPA11N60C3
|
659Kb/16P |
Cool MOS??Power Transistor Feature New revolutionary high voltage technology
Rev. 3 . 2 2009-11-27 |
SPA11N60C3
|
662Kb/15P |
Cool MOS??Power Transistor
Rev. 2.6 2005-09-21 |
SPA11N60C3
|
352Kb/14P |
Cool MOS??Power Transistor
2003-07-01 |