Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Sanken electric |
SJPX-F2
|
149Kb/5P
|
Silicon Diode
|
SJPX-F2VR
|
242Kb/5P
|
SJPX-F2 has the characteristics of low VF and superior trr at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature.
|
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Total : 48 ( 1/3 Page) |
Sanken electric |
SJPX-F2VR
|
242Kb/5P |
SJPX-F2 has the characteristics of low VF and superior trr at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature.
|
SJPX-H3
|
148Kb/5P |
Silicon Diode
|
SJPX-H3VR
|
244Kb/5P |
SJPX-H3 has the characteristics of low VF and superior trr at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature.
|
SJPX-H6
|
155Kb/5P |
Silicon Diode
|
SJPX-H6VR
|
232Kb/5P |
SJPX-H6 has the characteristics of low VF and superior trr at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature.
|
SJPA-D3
|
128Kb/5P |
Silicon Schottky Barrier Diode
|
SJPA-D3VL
|
128Kb/5P |
The present specifications shall apply to an SJPA-D3.
|
SJPA-H3
|
253Kb/6P |
Schottky Diode
|
SJPA-L3
|
252Kb/6P |
Schottky Diode
|
SJPA-L3VR
|
272Kb/5P |
The present specifications shall apply to an SJPA-L3.
|
SJPB-D4
|
187Kb/4P |
Schottky Barrier Rectifier
|
SJPB-D4VR
|
229Kb/5P |
SJPB-D4 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal.
|
SJPB-D6
|
187Kb/4P |
Schottky Barrier Rectifier
|
SJPB-D6VR
|
237Kb/5P |
SJPB-D6 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal.
|
SJPB-D9
|
189Kb/4P |
Schottky Barrier Rectifier
|
SJPB-H4
|
165Kb/4P |
Schottky Barrier Rectifier
|
SJPB-H6
|
188Kb/4P |
Schottky Barrier Rectifier
|
SJPB-H9
|
188Kb/4P |
Schottky Barrier Rectifier
|