Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Sanken electric |
SJPL-L4
|
148Kb/4P
|
Silicon Diode
|
SJPL-L4VR
|
226Kb/5P
|
SJPL-L4 realizes low leakage current at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature.
|
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Start with "SJPL-L4" -
Total : 48 ( 1/3 Page) |
Sanken electric |
SJPL-L4VR
|
226Kb/5P |
SJPL-L4 realizes low leakage current at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature.
|
SJPL-L2
|
216Kb/4P |
Fast Recovery Diode
|
SJPL-D2
|
150Kb/5P |
Silicon Diode
|
SJPL-F4
|
136Kb/5P |
Silicon Diode
|
SJPL-H2
|
122Kb/5P |
Silicon Diode
|
SJPL-H6
|
144Kb/4P |
Silicon Diode
|
SJPL-H6VL
|
144Kb/4P |
The present specifications shall apply to an SJPL-H6.
|
SJPA-D3
|
128Kb/5P |
Silicon Schottky Barrier Diode
|
SJPA-D3VL
|
128Kb/5P |
The present specifications shall apply to an SJPA-D3.
|
SJPA-H3
|
253Kb/6P |
Schottky Diode
|
SJPA-L3
|
252Kb/6P |
Schottky Diode
|
SJPA-L3VR
|
272Kb/5P |
The present specifications shall apply to an SJPA-L3.
|
SJPB-D4
|
187Kb/4P |
Schottky Barrier Rectifier
|
SJPB-D4VR
|
229Kb/5P |
SJPB-D4 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal.
|
SJPB-D6
|
187Kb/4P |
Schottky Barrier Rectifier
|
SJPB-D6VR
|
237Kb/5P |
SJPB-D6 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal.
|
SJPB-D9
|
189Kb/4P |
Schottky Barrier Rectifier
|
SJPB-H4
|
165Kb/4P |
Schottky Barrier Rectifier
|