| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Micro Commercial Compon... |
SI2301
|
242Kb/5P
|
P-Channel Enhancement Mode Field Effect Transistor
|
|
SI2301
|
330Kb/5P
|
P-Channel Enhancement Mode Field Effect Transistor
|
MAKO SEMICONDUCTOR CO.,... |
SI2301
|
109Kb/3P
|
High dense cell design for extremely low RDS(ON)
|
ZP Semiconductor |
SI2301
|
377Kb/6P
|
P-Channel Enhancement Mode MOSFET
|
GUANGDONG HOTTECH INDUS... |
SI2301
|
289Kb/3P
|
Plastic-Encapsulate Mosfets
|
Foshan Blue Rocket Elec... |
SI2301
|
728Kb/6P
|
P- CHANNEL MOSFET in a SOT-23 Plastic Package
|
Micro Commercial Compon... |
SI2301A
|
285Kb/5P
|
P-Channel Enhancement Mode Field Effect Transistor
|
Guangdong Youtai Semico... |
SI2301A
|
773Kb/3P
|
P-Channel 20-V(D-S) MOSFET
|
Vishay Siliconix |
SI2301ADS
|
39Kb/4P
|
P-Channel 2.5-V (G-S) MOSFET
Rev. B, 29-Apr-02
|
Texas Instruments |
Si2301ADS
|
1Mb/29P
|
[Old version datasheet] Triple-Supply Power Management IC for Powering FPGAs and DSPs
|
TECH PUBLIC Electronics... |
SI2301ADS
|
1Mb/6P
|
P-Channel Enhancement-Mode MOS FETs
|
VBsemi Electronics Co.,... |
SI2301ADS-T1-GE3
|
1Mb/9P
|
P-Channel 20-V (D-S) MOSFET
|
Guangdong Youtai Semico... |
SI2301B
|
883Kb/3P
|
P-Channel 20-V(D-S) MOSFET
|
Vishay Siliconix |
SI2301BD
|
59Kb/5P
|
P-Channel 2.5-V (G-S) MOSFET
Rev. B, 13-Oct-03
|
|
SI2301BDS
|
59Kb/5P
|
P-Channel 2.5-V (G-S) MOSFET
Rev. B, 13-Oct-03
|
|
SI2301BDS
|
93Kb/6P
|
P-Channel 2.5-V (G-S) MOSFET
Rev. D, 03-Mar-08
|
|
SI2301BDS
|
213Kb/9P
|
P-Channel 2.5 V (G-S) MOSFET
Rev. F, 17-Oct-11
|
|
SI2301BDS
|
213Kb/9P
|
P-Channel 2.5 V (G-S) MOSFET
Rev. F, 17-Oct-11
|
Guangdong Kexin Industr... |
SI2301BDS
|
1Mb/5P
|
P-Channel Enhancement MOSFET
|
Vishay Siliconix |
SI2301BDS
|
180Kb/8P
|
P-Channel 2.5 V (G-S) MOSFET
01-Jan-2022
|
Spanish ▼ 
English
Chinese
German
Japanese
Russian
Korean
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand