Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Sanken electric |
RU2YX
|
22Kb/1P
|
Fast-Recovery Rectifier Diodes
|
EIC discrete Semiconduc... |
RU2YX
|
39Kb/2P
|
FAST RECOVERY RECTIFIER DIODE
|
Galaxy Semi-Conductor H... |
RU2YX
|
57Kb/2P
|
HIGH EFFICIENCY RECTIFIER
|
Rugao Dachang Electroni... |
RU2YX
|
117Kb/2P
|
Plastic Ultra-Fast Recover Rectifier Reverse Voltage 100V Forward Current 1.5 A
|
Diode Semiconductor Kor... |
RU2YX
|
239Kb/2P
|
HIGH EFFICIENCY RECTIFIERS
|
EIC discrete Semiconduc... |
RU2YX
|
181Kb/2P
|
FAST RECOVERY RECTIFIER DIODE
Rev. 04:February 28, 2014
|
Galaxy Semi-Conductor H... |
RU2YXZ
|
57Kb/2P
|
HIGH EFFICIENCY RECTIFIER
|
Rugao Dachang Electroni... |
RU2YX
|
117Kb/2P
|
Plastic Ultra-Fast Recover Rectifier
|
EIC discrete Semiconduc... |
RU2YX
|
181Kb/2P
|
FAST RECOVERY RECTIFIER DIODE
Rev. 04:February 28, 2014
|
Search Partnumber :
Start with "RU2YX" -
Total : 104 ( 1/6 Page) |
Galaxy Semi-Conductor H... |
RU2YXZ
|
57Kb/2P |
HIGH EFFICIENCY RECTIFIER
|
Rugao Dachang Electroni... |
RU2YX
|
117Kb/2P |
Plastic Ultra-Fast Recover Rectifier
|
EIC discrete Semiconduc... |
RU2YX
|
181Kb/2P |
FAST RECOVERY RECTIFIER DIODE
Rev. 04:February 28, 2014 |
Galaxy Semi-Conductor H... |
RU2YZ
|
57Kb/2P |
HIGH EFFICIENCY RECTIFIER
|
Samsung semiconductor |
RU2012
|
4Mb/20P |
Passive components sales offices
|
Ruichips Semiconductor ... |
RU20120L
|
310Kb/8P |
N-Channel Advanced Power MOSFET
|
RU20130L
|
302Kb/9P |
N-Channel Advanced Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
RU20130L
|
928Kb/4P |
N-Channel MOSFET uses advanced trench technology
|
Ruichips Semiconductor ... |
RU2013H
|
274Kb/9P |
N-Channel Advanced Power MOSFET
|
VBsemi Electronics Co.,... |
RU2013HCGTR
|
1,006Kb/9P |
N-Channel 20V (D-S) MOSFET
|
Ruichips Semiconductor ... |
RU2020H
|
273Kb/9P |
N-Channel Advanced Power MOSFET
|