GT10J312 Datasheet, PDF

Fabricante Electrónico

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Toshiba Semiconductor	GT10J312	295Kb/6P	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
	GT10J312	509Kb/7P	SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
	GT10J312	1Mb/73P	Bipolar Small-Signal Transistors
	GT10J312	509Kb/7P	SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
Search Partnumber : Start with "GT10J312" - Total : 13 ( 1/1 Page)
Toshiba Semiconductor	GT10J312	509Kb/7P	SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
	GT10J311	322Kb/6P	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
	GT10J301	321Kb/6P	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
	GT10J301	1Mb/73P	Bipolar Small-Signal Transistors
	GT10J301	493Kb/7P	HIGH POWER SWITCHING APPLICATIONS
	GT10J303	291Kb/6P	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
	GT10J303	473Kb/7P	SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
	GT10J303	1Mb/73P	Bipolar Small-Signal Transistors
	GT10J303	473Kb/7P	SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
	GT10J321	158Kb/6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
	GT10J321	204Kb/7P	Silicon N Channel IGBT High Power Switching Applications
	GT10J321	1Mb/73P	Bipolar Small-Signal Transistors
	GT10J321	204Kb/7P	Silicon N Channel IGBT High Power Switching Applications

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