Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
RF Micro Devices |
ATC800A100JT
|
1Mb/14P
|
30W GaN WIDEBAND POWER AMPLIFIER
|
ATC800A100JT
|
1Mb/14P
|
60W GaN WIDEBAND POWER AMPLIFIER
|
ATC800A100JT
|
1Mb/14P
|
90W GaN WIDE-BAND POWER AMPLIFIER
|
ATC800A100JT
|
1Mb/14P
|
120W GaN WIDEBAND POWER AMPLIFIER
|
List of Unclassifed Man... |
ATC800A100JT250XI
|
165Kb/5P
|
RoHS Compliant / Lead Free
|
ATC800A100JT250XT
|
165Kb/5P
|
RoHS Compliant / Lead Free
|
ATC800A100JT250XTV
|
165Kb/5P
|
RoHS Compliant / Lead Free
|
RF Micro Devices |
ATC800A101JT
|
871Kb/10P
|
280W GaN Wideband Pulsed Power Amplifier
|
ATC800A1R0BT
|
1Mb/14P
|
30W GaN WIDEBAND POWER AMPLIFIER
|
ATC800A1R0BT
|
1Mb/14P
|
90W GaN WIDE-BAND POWER AMPLIFIER
|
ATC800A1R5BT
|
1Mb/14P
|
90W GaN WIDE-BAND POWER AMPLIFIER
|
ATC800A1R5BT
|
1Mb/14P
|
120W GaN WIDEBAND POWER AMPLIFIER
|
ATC800A1R8BT
|
1Mb/14P
|
90W GaN WIDE-BAND POWER AMPLIFIER
|
ATC800A1R8BT
|
1Mb/14P
|
120W GaN WIDEBAND POWER AMPLIFIER
|
Kemet Corporation |
C4AEJBU4800A11J
|
674Kb/9P
|
Typical applications include DC filtering and energy storage.
|
C4AEOBU4800A12J
|
674Kb/9P
|
Typical applications include DC filtering and energy storage.
|
C4AQIBU4800A11J
|
58Kb/1P
|
C4AQ, Film, Metallized Polypropylene, Automotive DC Link, 8 uF, 5%, 800 V, 70C, Lead Spacing = 27.5mm
|
C4AQLLU4800A12K
|
57Kb/1P
|
C4AQ, Film, Metallized Polypropylene, Automotive DC Link, 8 uF, 10%, 500 VDC, 70째C, Lead Spacing = 27.5mm
|
C4AQQBU4800A12J
|
58Kb/1P
|
C4AQ, Film, Metallized Polypropylene, Automotive DC Link, 8 uF, 5%, 1,100 V, 70C, Lead Spacing = 27.5mm
|
Nell Semiconductor Co.,... |
D800A12
|
730Kb/5P
|
Standard Recovery Diodes
|