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STM32F769AI Datasheet(PDF) 190 Page - STMicroelectronics |
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STM32F769AI Datasheet(HTML) 190 Page - STMicroelectronics |
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190 / 255 page ![]() Electrical characteristics STM32F765xx STM32F767xx STM32F768Ax STM32F769xx 190/255 DocID029041 Rev 4 Note: When VBUS sensing feature is enabled, PA9 and PB13 should be left at their default state (floating input), not as alternate function. A typical 200 μA current consumption of the sensing block (current to voltage conversion to determine the different sessions) can be observed on PA9 and PB13 when the feature is enabled. Figure 55. USB OTG full speed timings: definition of data signal rise and fall time RPD PA11, PA12, PB14, PB15 (USB_FS_DP/DM, USB_HS_DP/DM) VIN = VDD 17 21 24 k Ω PA9, PB13 (OTG_FS_VBUS, OTG_HS_VBUS) 2.4 5.2 8 RPU PA12, PB15 (USB_FS_DP, USB_HS_DP) VIN = VSS 1.5 1.8 2.1 PA9, PB13 (OTG_FS_VBUS, OTG_HS_VBUS) VIN = VSS 0.55 0.95 1.35 1. All the voltages are measured from the local ground potential. 2. The USB OTG full speed transceiver functionality is ensured down to 2.7 V but not the full USB full speed electrical characteristics which are degraded in the 2.7-to-3.0 V VDDUSB voltage range. 3. Guaranteed by design. 4. RL is the load connected on the USB OTG full speed drivers. Table 91. USB OTG full speed DC electrical characteristics (continued) Symbol Parameter Conditions Min. (1) Typ. Max. (1) Unit Table 92. USB OTG full speed electrical characteristics(1) Driver characteristics Symbol Parameter Conditions Min Max Unit tr Rise time(2) CL = 50 pF 420 ns tf Fall time(2) CL = 50 pF 4 20 ns trfm Rise/ fall time matching tr/tf 90 110 % VCRS Output signal crossover voltage - 1.3 2.0 V ZDRV Output driver impedance(3) Driving high or low 28 44 Ω |
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