SPC564A80L7 datasheet(109/157 Pages) STMICROELECTRONICS

109 / 157 page

SPC564A74L7, SPC564A80B4, SPC564A80L7

Electrical characteristics

Doc ID 15399 Rev 9

109/157

3.13

Configuring SRAM wait states

Use the SWSC field in the ECSM_MUDCR register to specify an additional wait state for the

device SRAM. By default, no wait state is added.

Please see the device reference manual for details.

3.14

Platform flash controller electrical characteristics

3.15

Flash memory electrical characteristics

Table 31.

Cutoff frequency for additional SRAM wait state

(1)

Max frequencies including 2% PLL FM.

SWSC Value

153

Table 32.

APC, RWSC, WWSC settings vs. frequency of operation(1),(2)

APC, RWSC and WWSC are fields in the flash memory BIUCR register used to specify wait states for

address pipelining and read/write accesses. Illegal combinations exist—all entries must be taken from the

same row.

TBD: To Be Defined.

Max. Flash Operating

Frequency (MHz)(3)

Max frequencies including 2% PLL FM.

APC(4)

APC must be equal to RWSC.

RWSC(4)

WWSC

20 MHz

0b000

0b11

61 MHz

0b001

0b11

90 MHz

0b010

0b11

123 MHz

0b011

0b11

153 MHz

0b100

0b11

Table 33.

Flash program and erase specifications(1)

#Symbol

Parameter

Min.

Value

Typical

Value

Initial

Max(2)

Max(3)

Unit

1Tdwprogram

Double Word (64 bits) Program Time

—

500

s

2Tpprogram

Page Program Time

—

160(4)

500

s

3T16kpperase

16 KB Block Pre-program and Erase

Time

—

300

1000

5000

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