STM32F411RET6 datasheet(117/149 Pages) STMICROELECTRONICS

No. de pieza	STM32F411RET6

Descripción Electrónicos	ARM® Cortex®-M4 32b MCUFPU, 125 DMIPS, 512KB Flash, 128KB RAM, USB OTG FS, 11 TIMs, 1 ADC, 13 comm. interfaces

PDF	149 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

Logo

117 / 149 page

DocID026289 Rev 6

117/149

STM32F411xC STM32F411xE

Electrical characteristics

123

Figure 40. ADC accuracy characteristics

1. See also Table 67.

2. Example of an actual transfer curve.

3. Ideal transfer curve.

4. End point correlation line.

5. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.

EO = Offset Error: deviation between the first actual transition and the first ideal one.

EG = Gain Error: deviation between the last ideal transition and the last actual one.

ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.

EL = Integral Linearity Error: maximum deviation between any actual transition and the end point

correlation line.

Figure 41. Typical connection diagram using the ADC

1. Refer to Table 65 for the values of RAIN, RADC and CADC.

2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the

pad capacitance (roughly 5 pF). A high Cparasitic value downgrades conversion accuracy. To remedy this,

fADC should be reduced.

STM32F411RET6 Datasheet(PDF) 117 Page - STMicroelectronics