Absolute Maximum Ratings

If MilitaryAerospace specified devices are required please contact the

National

Semiconductor

Sales

OfficeDistributors

for

availability

and

specifications

(Note 5)

LM112LM212

LM312

Supply Voltage

g

20V

g

18V

Power Dissipation (Note 1)

500 mW

500 mW

Differential Input Current (Note 2)

g

10 mA

g

10 mA

Input Voltage (Note 3)

g

15V

g

15V

Output Short-Circuit Duration

Continuous

Continuous

Operating Temperature Range

LM112

b

LM212

b

Storage Temperature Range

b

b

Lead Temperature (Soldering 10 sec)

300 C

300 C

ESD rating to be determined

Parameter

Conditions

LM112LM212

LM312

Units

Min

Typ

Max

Min

Typ

Max

Input Offset Voltage

07

20

20

75

mV

Input Offset Current

005

02

02

1

nA

Input Bias Current

08

20

15

7

nA

Input Resistance

70

10

40

MX

Supply Current

03

06

03

08

mA

Large Signal Voltage Gain

50

300

25

300

VmV

Input Offset Voltage

30

10

mV

Average Temperature

Coefficient of Input

30

15

60

30

m

V C

Offset Voltage

Input Offset Current

04

15

nA

Average Temperature

Coefficient of Input

05

25

20

10

pA C

Offset Current

Input Bias Current

30

10

nA

Supply Current

015

04

mA

Large Signal Voltage Gain

25

15

VmV

Output Voltage Swing

g

13

g

14

g

13

g

14

V

Input Voltage Range

g

135

g

14

V

Common-Mode Rejection Ratio

85

100

80

100

dB

Supply Voltage Rejection Ratio

80

96

80

96

dB

Note 1

The maximum junction temperature of the LM112 is 150 C LM212 is 100 C and LM312 is 85 C For operating at elevated temperatures devices in the H08

package must be derated based on a thermal resistance of 160 CW junction to ambient or 20 CW junction to case

Note 2

The inputs are shunted with shunt diodes for overvoltage protection Therefore excessive current will flow if a differential input voltage in excess of 1V is

applied between the inputs unless some limiting resistance is used

Note 3

Note 4

Note 5

Refer to RETS112X for LM112H military specifications

2