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AM-131-PIN Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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AM-131-PIN Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 3 page ![]() 1 Product Type: Broadband RF Amplifier Frequency: 5 to 500 MHz Rev. V4 AM-131-PIN M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Product Image Features HIGH DYNAMIC RANGE: +116 dBm (1 MHz Band) HIGH OUTPUT POWER: +19 dBm (TYP.) HIGH THIRD ORDER I.P. + 34.0 dBm (TYP.) LOW NOISE: 4.0 dB (TYP.) Description The AM-131-PIN RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. An active DC biasing network is used for temperature-stable performance, in addition to an RF Choke, used for power supply decoupling. Ordering Information Part Number Package AM-131 PIN 4 TO-8-1 4. Mounting kit part number AU00071 required for PCB applications. Electrical Specifications: Z0 = 50, VCC = +15 VDC Parameter Units Typical Guaranteed 25ºC 0º to 50ºC -54º to +85ºC* Frequency MHz 5-500 5-500 5-500 Small Signal Gain (min) dB 11.5 10.0 9.5 Gain Flatness (max) dB ±0.3 ±0.7 ±1.0 Reverse Isolation dB 16 Noise Figure (max) dB 4.0 5.0 5.5 Power Output @ 1 dB comp. (min) dBm 19.0 18.0 17.5 IP3 dBm +34 IP2 dBm +48 Second Order Harmonic IP dBm +54 VSWR Input / Output (max) 1.5:1 / 1.5:1 1.9:1 / 1.9:1 2.0:1 / 2.0:1 DC Current @ 15 Volts (max) mA 65 69 72 Absolute Maximum Ratings Parameter Absolute Maximum Storage Temperature -62ºC to +125ºC Case Temperature +125ºC DC Voltage +17 V Continuous Input Power 13 dBm Short Term Input power (1 minute max.) 50 mW Peak Power (3 µsec max.) 0.5 W Thermal Data: VCC = +15 VDC Parameter Rating Thermal Resistance θjc 75ºC/W Transistor Power Dissipation Pd 0.651 W Junction Temperature Rise Above Case Tjc 49ºC |
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