STM32F756VG datasheet(175/228 Pages) STMICROELECTRONICS

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DocID027589 Rev 4

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STM32F756xx

Electrical characteristics

196

Table 92. Asynchronous multiplexed PSRAM/NOR read timings(1)

1. Guaranteed by characterization results.

Symbol

Parameter

Min

Max

Unit

tw(NE)

FMC_NE low time

3THCLK−0.5 3THCLK+1.5

tv(NOE_NE)

FMC_NEx low to FMC_NOE low

2THCLK−12THCLK+0.5

ttw(NOE)

FMC_NOE low time

THCLK−0.5

THCLK+0.5

th(NE_NOE)

FMC_NOE high to FMC_NE high hold time

tv(A_NE)

FMC_NEx low to FMC_A valid

0.5

tv(NADV_NE)

FMC_NEx low to FMC_NADV low

0.5

tw(NADV)

FMC_NADV low time

THCLK−0.5

THCLK+1.5

th(AD_NADV)

FMC_AD(address) valid hold time after

FMC_NADV high)

th(A_NOE)

Address hold time after FMC_NOE high

THCLK−0.5

th(BL_NOE)

FMC_BL time after FMC_NOE high

tv(BL_NE)

FMC_NEx low to FMC_BL valid

0.5

tsu(Data_NE)

Data to FMC_NEx high setup time

THCLK−2

tsu(Data_NOE)

Data to FMC_NOE high setup time

THCLK−2

th(Data_NE)

Data hold time after FMC_NEx high

th(Data_NOE)

Data hold time after FMC_NOE high

Table 93. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings(1)

1. Guaranteed by characterization results.

Symbol

Parameter

Min

Max

Unit

tw(NE)

FMC_NE low time

8THCLK−18THCLK+2

tw(NOE)

FMC_NWE low time

5THCLK−15THCLK +1

tsu(NWAIT_NE)

FMC_NWAIT valid before FMC_NEx high 5THCLK +1.5

th(NE_NWAIT)

FMC_NEx hold time after FMC_NWAIT

invalid

4THCLK+1

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