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STM32F756VG Datasheet(PDF) 165 Page - STMicroelectronics

No. de pieza STM32F756VG
Descripción Electrónicos  Up to 25 communication interfaces
PDF  228 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STM32F756VG Datasheet(HTML) 165 Page - STMicroelectronics

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STM32F756xx
Electrical characteristics
196
Figure 53. USB OTG full speed timings: definition of data signal rise and fall time
USB high speed (HS) characteristics
Unless otherwise specified, the parameters given in Table 84 for ULPI are derived from
tests performed under the ambient temperature, fHCLK frequency summarized in Table 83
and VDD supply voltage conditions summarized in Table 82, with the following configuration:
•
Output speed is set to OSPEEDRy[1:0] = 11, unless otherwise specified
•
Capacitive load C = 20 pF, unless otherwise specified
•
Measurement points are done at CMOS levels: 0.5VDD.
Refer to Section 5.3.17: I/O port characteristics for more details on the input/output
characteristics.
Table 81. USB OTG full speed electrical characteristics(1)
1. Guaranteed by design.
Driver characteristics
Symbol
Parameter
Conditions
Min
Max
Unit
tr
Rise time(2)
2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification - Chapter 7 (version 2.0).
CL = 50 pF
420
ns
tf
Fall time(2)
CL = 50 pF
4
20
ns
trfm
Rise/ fall time matching
tr/tf
90
110
%
VCRS
Output signal crossover voltage
-
1.3
2.0
V
ZDRV
Output driver impedance(3)
3. No external termination series resistors are required on DP (D+) and DM (D-) pins since the matching
impedance is included in the embedded driver.
Driving high or
low
28
44
Ω
Table 82. USB HS DC electrical characteristics
Symbol
Parameter
Min.(1)
1. All the voltages are measured from the local ground potential.
Max.(1)
Unit
Input level
VDD
USB OTG HS operating voltage
1.7
3.6
V



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