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CF745 Datasheet(PDF) 136 Page - Microchip Technology |
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CF745 Datasheet(HTML) 136 Page - Microchip Technology |
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136 / 217 page ![]() PIC16C5X PIC16C58A DS30453B-page 136 Preliminary © 1998 Microchip Technology Inc. 16.4 DC Characteristics: PIC16LV58A-02 (Commercial) PIC16LV58A-02 (Industrial) DC Characteristics Power Supply Pins Standard Operating Conditions (unless otherwise specified) Operating Temperature 0 °C ≤ TA ≤ +70°C (commercial) –20 °C ≤ TA ≤ +85°C (industrial) Characteristic Sym Min Typ(1) Max Units Conditions Supply Voltage XT, RC and LP options VDD 2.0 — 3.8 V RAM Data Retention Voltage(2) VDR — 1.5* — V Device in SLEEP mode VDD start voltage to ensure Power-On Reset VPOR —VSS — V See section on Power-On Reset for details VDD rise rate to ensure Power-On Reset SVDD 0.05* — — V/ms See section on Power-On Reset for details Supply Current(3) XT and RC(4) options LP option, Commercial LP option, Industrial IDD — — — 0.5 11 14 1.8 27 35 mA µA µA FOSC = 2.0 MHz, VDD = 3.0V FOSC = 32 kHz, VDD = 2.5V, WDT disabled FOSC = 32 kHz, VDD = 2.5V, WDT disabled Power Down Current(5)(6) Commercial Industrial IPD — — — — 2.5 0.25 2.5 0.25 12 4.0 14 5.0 µA µA µA µA VDD = 2.5V, WDT enabled VDD = 2.5V, WDT disabled VDD = 2.5V, WDT enabled VDD = 2.5V, WDT disabled * These parameters are characterized but not tested. Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25 °C.This data is for design guidance only and is not tested. 2: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data. 3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an impact on the current consumption. a) The test conditions for all IDD measurements in active operation mode are: OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to Vss, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified. b) For standby current measurements, the conditions are the same, except that the device is in SLEEP mode. 4: Does not include current through Rext. The current through the resistor can be estimated by the formula: IR = VDD/2Rext (mA) with Rext in k Ω. 5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS. 6: The oscillator start-up time can be as much as 8 seconds for XT and LP oscillator selection, if the SLEEP mode is entered or during initial power-up. |
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