3

P/N:PM0256

REV. 2.6, AUG. 26, 2003

MX27L512

NOTES: 1. VH = 12.0 V ± 0.5 V

2. X = Either VIH or VIL

3. A1 - A8 = A10 - A15 = VIL(For auto select)

4. See DC Programming Characteristics for VPP voltage during

programming.

TWO-LINE OUTPUT CONTROL FUNCTION

To accommodate multiple memory connections, a two-

line control function is provided to allow for:

1. Low memory power dissipation,

2. Assurance that output bus contention will not

occur.

It is recommended that CE be decoded and used as the

primary device-selecting function, while OE be made a

common connection to all devices in the array and

connected to the READ line from the system control bus.

This assures that all deselected memory devices are in

their low-power standby mode and that the output pins

are only active when data is desired from a particular

memory device.

SYSTEM CONSIDERATIONS

During the switch between active and standby

conditions, transient current peaks are produced on the

rising and falling edges of Chip Enable. The magnitude

of these transient current peaks is dependent on the

output capacitance loading of the device. At a minimum,

a 0.1 uF ceramic capacitor (high frequency, low inherent

inductance) should be used on each device between

VCC and GND to minimize transient effects. In addition,

to overcome the voltage drop caused by the inductive

effects of the printed circuit board traces on EPROM

arrays, a 4.7 uF bulk electrolytic capacitor should be

used between VCC and GND for each eight devices.

The location of the capacitor should be close to where

the power supply is connected to the array.

MODE SELECT TABLE

PINS

MODE

CE

OE/VPP

A0

A9

OUTPUTS

Read

VIL

VIL

X

X

DOUT

Output Disable

VIL

VIH

X

X

High Z

Standby (TTL)

VIH

X

X

X

High Z

Standby (CMOS)

VCC±0.3V

X

X

X

High Z

Program

VIL

VPP

X

X

DIN

Program Verify

VIL

VIL

X

X

DOUT

Program Inhibit

VIH

VPP

X

X

High Z

Manufacturer Code(3)

VIL

VIL

VIL

VH

C2H

Device Code(3)

VIL

VIL

VIH

VH

91H