2SB562 datasheet(2/6 Pages) HITACHI

No. de pieza	2SB562

Descripción Electrónicos	Silicon PNP Epitaxial

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2SB562

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

V

CBO

–25

V

Collector to emitter voltage

V

CEO

–20

V

Emitter to base voltage

V

EBO

–5

V

Collector current

I

C

–1.0

A

Collector peak current

i

C(peak)

–1.5

A

Collector power dissipation

P

C

0.9

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V

(BR)CBO

–25

—

V

I

C = –10 µA, IE = 0

Collector to emitter breakdown

voltage

V

(BR)CEO

–20

—

V

I

C = –1 mA, RBE = ∞

Emitter to base breakdown

voltage

V

(BR)EBO

–5

——V

I

E = –10 µA, IC = 0

Collector cutoff current

I

CBO

—

–1.0

µAV

CB = –20 V, IE = 0

DC current transfer ratio

h

FE*

1

85

—

240

V

CE = –2 V,

I

C = –0.5 A (Pulse test)

Collector to emitter saturation

voltage

V

CE(sat)

—

–0.2

–0.5

V

I

C = –0.8 A,

I

B = –0.08 A (Pulse test)

Base to emitter voltage

V

BE

—

–0.8

–1.0

V

CE = –2 V,

I

C = –0.5 A (Pulse test)

Gain bandwidth product

f

T

—

350

—

MHz

V

CE = –2 V,

I

C = –0.5 A (Pulse test)

Collector output capacitance

Cob

—

38

—

pF

V

CB = –10 V, IE = 0

f = 1 MHz

Note:

1. The 2SB562 is grouped by h

FE as follows.

BC

85 to 170

120 to 240

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