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changes to the product(s) or information contained herein without notice.

1

Product Type: Broadband RF Amplifier

Frequency: 5 to 500 MHz

Rev. V4

AM-131-PIN

ADVANCED:

Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY:

Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Product Image

Features

• HIGH DYNAMIC RANGE: +116 dBm (1 MHz Band)

• HIGH OUTPUT POWER: +19 dBm (TYP.)

• HIGH THIRD ORDER I.P. + 34.0 dBm (TYP.)

• LOW NOISE: 4.0 dB (TYP.)

Description

The AM-131-PIN RF amplifier is a discrete thin film hybrid

design, which incorporates the use of thin film manufacturing

processes for accurate performance and high reliability. This

single stage bipolar transistor feedback amplifier design

displays impressive performance over a broadband

frequency range. An active DC biasing network is used for

temperature-stable performance, in addition to an RF Choke,

used for power supply decoupling.

Ordering Information

Part Number

Package

TO-8-1

4. Mounting kit part number AU00071 required for PCB applications.

Parameter

Units

Typical

Guaranteed

25ºC

0º to 50ºC

-54º to +85ºC*

Frequency

MHz

5-500

5-500

5-500

Small Signal Gain (min)

dB

11.5

10.0

9.5

Gain Flatness (max)

dB

±0.3

±0.7

±1.0

Reverse Isolation

dB

16

Noise Figure (max)

dB

4.0

5.0

5.5

Power Output

@ 1 dB comp. (min)

dBm

19.0

18.0

17.5

IP3

dBm

+34

IP2

dBm

+48

Second Order Harmonic IP

dBm

+54

VSWR Input / Output (max)

1.5:1 / 1.5:1

1.9:1 / 1.9:1

2.0:1 / 2.0:1

DC Current @ 15 Volts (max)

mA

65

69

72

Absolute Maximum Ratings

Parameter

Absolute

Maximum

Storage Temperature

-62ºC to +125ºC

Case Temperature

+125ºC

DC Voltage

+17 V

Continuous Input Power

13 dBm

Short Term Input power

(1 minute max.)

50 mW

Peak Power (3 µsec max.)

0.5 W

Parameter

Rating

75ºC/W

0.651 W

Junction Temperature Rise Above

49ºC