ST72521 datasheet(178/211 Pages) STMICROELECTRONICS

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ST72521

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12.7 EMC CHARACTERISTICS

Susceptibility tests are performed on a sample ba-

sis during product characterization.

12.7.1 Functional EMS

(Electro Magnetic Susceptibility)

Based on a simple running application on the

product (toggling 2 LEDs through I/O ports), the

product is stressed by two electro magnetic events

until a failure occurs (indicated by the LEDs).

ESD: Electro-Static Discharge (positive and

negative) is applied on all pins of the device until

a functional disturbance occurs. This test

conforms with the IEC 1000-4-2 standard.

FTB: A Burst of Fast Transient voltage (positive

and negative) is applied to VDD and VSS through

a 100pF capacitor, until a functional disturbance

occurs. This test conforms with the IEC 1000-4-

4 standard.

A device reset allows normal operations to be re-

sumed.

12.7.2 Electro Magnetic Interference (EMI)

Based on a simple application running on the product (toggling 2 LEDs through the I/O ports), the product

is monitored in terms of emission. This emission test is in line with the norm SAE J 1752/3 which specifies

the board and the loading of each pin.

Notes:

1. Data based on characterization results, not tested in production.

Symbol

Parameter

Conditions

Neg 1)

Pos 1)

Unit

VFESD

Voltage limits to be applied on any I/O pin

to induce a functional disturbance

VDD=5V, TA=+25°C, fOSC=8MHz

conforms to IEC 1000-4-2

-1

1.5

VFFTB

Fast transient voltage burst limits to be ap-

plied through 100pF on VDD and VDD pins

to induce a functional disturbance

VDD=5V, TA=+25°C, fOSC=8MHz

conforms to IEC 1000-4-4

-1.5

1.5

Symbol

Parameter

Conditions

Monitored

Frequency Band

Max vs. [fOSC/fCPU]

Unit

8/4MHz

16/8MHz

SEMI

Peak level

VDD=5V, TA=+25°C,

TQFP64 14x14 package

conforming to SAE J 1752/3

0.1MHz to 30MHz

µV

30MHz to 130MHz

130MHz to 1GHz

SAE EMI Level

2.5

3.0

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