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SDD165 Datasheet(PDF) 2 Page - Sirectifier Semiconductors |
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SDD165 Datasheet(HTML) 2 Page - Sirectifier Semiconductors |
2 / 4 page SDD165 Diode-Diode Modules ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits APPLICATIONS * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies Symbol Test Conditions Characteristic Values Unit V VF IF=300A; TVJ=25 oC 1.3 VTO For power-loss calculations only 0.8 V rT 1.3 m IR TVJ=TVJM; VR=VRRM 20 mA TVJ=TVJM per diode; DC current per module RthJC 0.21 0.105 K/W per diode; DC current per module RthJK 0.31 0.155 K/W dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s 2 uC QS TVJ=125 oC; IF=300A; -di/dt=50A/us 550 IRM 235 A FEATURES * International standard package * Planar passivated chips * Isolation voltage 3600 V~ * Copper base plate |
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Descripción similar - SDD165 |
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