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STM32F427AI Datasheet(PDF) 165 Page - STMicroelectronics

No. de pieza STM32F427AI
Descripción Electrónicos  32b Arm® Cortex®-M4 MCUFPU, 225DMIPS, up to 2MB Flash/2564KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 20 com. interfaces, camera & LCD-TFT
PDF  240 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F427AI Datasheet(HTML) 165 Page - STMicroelectronics

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DS9405 Rev 12
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STM32F427xx STM32F429xx
Electrical characteristics
197
6.3.23
VBAT monitoring characteristics
6.3.24
Reference voltage
The parameters given in Table 84 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 17.
Table 83. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-50-
KΩ
Q
Ratio on VBAT measurement
-
4
-
-
Er(1)
Error on Q
–1
-
+1
%
TS_vbat(2)(2)
ADC sampling time when reading the VBAT
1 mV accuracy
5-
-
µs
1. Specified by design.
2. The shortest sampling time can be determined in the application by multiple iterations.
Table 84. internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltage
–40 °C < TA < +105 °C 1.18
1.21
1.24
V
TS_vrefint(1)
ADC sampling time when reading the
internal reference voltage
-10
-
-
µs
VRERINT_s(2)
Internal reference voltage spread over the
temperature range
VDD = 3V ± 10mV
-
3
5
mV
TCoeff(2)
Temperature coefficient
-
-
30
50
ppm/°C
tSTART(2)
Startup time
-
-
6
10
µs
1. The shortest sampling time can be determined in the application by multiple iterations.
2. Specified by design, not tested in production
Table 85. Internal reference voltage calibration values
Symbol
Parameter
Memory address
VREFIN_CAL Raw data acquired at temperature of 30 °C VDDA = 3.3 V
0x1FFF 7A2A - 0x1FFF 7A2B



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