IS25LE128E-RMLA3:P-TY datasheet(172/197 Pages) ISSI

No. de pieza	IS25LE128E-RMLA3:P-TY

Descripción Electrónicos	SERIAL FLASH MEMORY 133/166MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC

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Fabricante Electrónico	ISSI [Integrated Silicon Solution, Inc]

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IS25LE256E/128E

IS25WE256E/128E

Integrated Silicon Solution, Inc.- www.issi.com

172

Rev.A9

03/07/2023

8.65 GANG SECTOR/BLOCK UNLOCK OPERATION (GBUN, 98h)

The Gang Sector/Block Unlock (GBUN) instruction provides a quick method to clear all DYB (Dynamic Protection

Bit)

bits to “1” at once.

Before the GBUN (98h) command can be accepted by the device, a Write Enable (WREN) command must be

issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any

write operations.

The sequence of issuing GBUN instruction is: drive CE# low → send GBUN instruction code → drive CE# high.

The instruction code will be shifted into the device on the rising edge of SCK.

The GBUN command is accepted in both SPI and QPI mode. The CE# must go high exactly at the byte boundary,

otherwise, the instruction will be ignored and not be executed. While the GBUN operation is in progress, the Status

operation, and is “0” when it is completed.

Figure 8.144 Gang Sector/Block Unlock Sequence In SPI Mode

Instruction = 98h

CE#

SCK

Mode 3

Mode 0

High Impedance

Figure 8.145 Gang Sector/Block Unlock Sequence In QPI Mode

98h

CE#

SCK

IO[3:0]

Mode 3

Mode 0

IS25LE128E-RMLA3:P-TY Datasheet(PDF) 172 Page - Integrated Silicon Solution, Inc