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IS25LE512M-RMLA3:P-TY Datasheet(PDF) 137 Page - Integrated Silicon Solution, Inc

No. de pieza IS25LE512M-RMLA3:P-TY
Descripción Electrónicos  SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  189 Pages
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Fabricante Electrónico  ISSI [Integrated Silicon Solution, Inc]
Página de inicio  http://www.issi.com
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IS25LE512M-RMLA3:P-TY Datasheet(HTML) 137 Page - Integrated Silicon Solution, Inc

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IS25LE512M
IS25WE512M
Integrated Silicon Solution, Inc.- www.issi.com
137
Rev. A6
06/16/2025
Figure 8.93 FRQDTR AX Read Sequence (EDh [EXTADD=1] or EEh, 4-byte address)
CE #
SCK
4-byte Address
0
1
2
3
4
5
6
7
8
9
10
11
Mode 3
Mode 0
tV
28 24 20
5 1
29 25 21
4 0
IO0
IO1
30 26 22
31 27 23
16 12
0
17 13
1
18 14
2
19 15
3
6 Dummy Cycles
IO2
IO3
6 2
7 3
5 1
4 0
6 2
7 3
5 1
4 0
6 2
7 3
5 1
4 0
6 2
7 3
Data
Out
Data
Out
Data
Out
Data
Out
5 1
4 0
6 2
7 3
Mode Bits
12
13
...
8 4
9 5
10 6
11 7
...
...
...
...
Notes:
1.
If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the
mode bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles
are same, then X should be Hi-Z.



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