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ST10F273 Datasheet(PDF) 133 Page - STMicroelectronics

No. de pieza ST10F273
Descripción Electrónicos  16-bit MCU with 512 Kbyte Flash memory and 36 Kbyte RAM
PDF  179 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ST10F273 Datasheet(HTML) 133 Page - STMicroelectronics

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ST10F273
Electrical characteristics
133/179
24.6
Flash characteristics
VDD = 5 V
± 10%, V
SS = 0 V
Table 65.
Flash characteristics
Parameter
Typical
Maximum
Unit
Notes
TA = 25°C
TA = 125°C
0 cycles(1)
1.
The figures are given after about 100 cycles due to testing routines (0 cycles at the final customer).
0 cycles(1)
100k
cycles
Word program (32-bit)(2)
2.
Word and Double Word Programming times are provided as average values derived from a full sector
programming time: absolute value of a Word or Double Word Programming time could be longer than the
average value.
35
80
290
µs–
Double word program
(64-bit)(2)
60
150
570
µs–
Bank 0 program (384K)
(double word program)
2.9
7.4
28.0
s
–
Bank 1 program (128K)
(double word program)
1.0
2.5
9.3
s
–
Sector erase (8K)
0.6
0.5
0.9
0.8
1.0
0.9
s
not preprogrammed
preprogrammed
Sector erase (32K)
1.1
0.8
2.0
1.8
2.7
2.5
s
not preprogrammed
preprogrammed
Sector erase (64K)
1.7
1.3
3.7
3.3
5.1
4.7
s
not preprogrammed
preprogrammed
Bank 0 erase (384K)(3)
3.
Bank Erase is obtained through a multiple Sector Erase operation (setting bits related to all sectors of the
Bank). As ST10F273 implements only one bank, the Bank Erase operation is equivalent to Module and
Chip Erase operations.
8.2
5.8
20.2
17.7
28.6
26.1
s
not preprogrammed
preprogrammed
Bank 1 erase (128K)(3)
3.0
2.2
7.0
6.2
9.8
9.0
s
not preprogrammed
preprogrammed
Recovery from power-down
(tPD)
-40
40
µs
(4)
4.
Not 100% tested, guaranteed by Design Characterization
Program suspend latency(4)
-10
10
µs
Erase suspend latency(4)
-30
30
µs
Erase suspend request rate(4)
20
20
20
ms
Minimum delay
between 2 requests
Set protection(4)
40
170
170
µs



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