NM27C512Q200 datasheet(3/10 Pages) NSC

No. de pieza	NM27C512Q200

Descripción Electrónicos	524,288-Bit (64K x 8) High Performance CMOS EPROM

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Fabricante Electrónico	NSC [National Semiconductor (TI)]

Página de inicio	http://www.national.com

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3 / 10 page

Absolute Maximum Ratings (Note 1)

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Storage Temperature

b

65 Cto a150 C

All Input Voltages Except A9 with

Respect to Ground

b

06V to a7V

VPP and A9 with Respect to Ground

b

07V to a14V

VCC Supply Voltage with

Respect to Ground

b

06V to a7V

ESD Protection

(MIL Std 883 Method 30152)

l

2000V

All Output Voltages with

Respect to Ground

VCC a 10V to GND b06V

Operating Range

Range

Temperature

VCC

Tolerance

Comm’l

0 Cto a70 C

a

5V

g

10%

Industrial

b

40 Cto a85 C

a

5V

g

10%

Military

b

55 Cto a125 C

a

5V

g

10%

Read Operation

DC Electrical Characteristics

Symbol

Parameter

Test Conditions

Min

Max

Units

VIL

Input Low Level

b

05

08

V

VIH

Input High Level

20

VCC a 1V

VOL

Output Low Voltage

IOL e 21 mA

04

V

VOH

Output High Voltage

IOH eb25 mA

35

V

ISB1

VCC Standby Current (CMOS)

CE e VCC g03V

100

m

A

ISB2

VCC Standby Current

CE e VIH

1mA

ICC1

VCC Active Current

CE e OE e VIL

f e 5 MHz

40

mA

ICC2

VCC Active Current

CE e GND f e 5 MHz

CMOS Inputs

Inputs e VCC or GND IO e 0mA

35

mA

C I Temp Ranges

IPP

VPP Supply Current

VPP e VCC

10

m

A

VPP

VPP Read Voltage

VC b 07

VCC

V

ILI

Input Load Current

VIN e 55V or GND

b

11

m

A

ILO

Output Leakage Current

VOUT e 55V or GND

b

10

m

A

AC Electrical Characteristics

Symbol

Parameter

90

120

150

200

Units

Min

Max

Min

Max

Min

Max

Min

Max

tACC

Address to Output

90

120

150

200

ns

Delay

tCE

CE to Output Delay

90

120

150

200

tOE

OE to Output Delay

40

50

tDF

Output Disable to

35

25

45

55

Output Float

tOH

Output Hold from

Addresses CE or OE

000

Whichever Occurred First

3

Número de pieza similar - NM27C512Q200

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Fairchild Semiconductor	NM27C512Q	105Kb / 10P	524,288-Bit (64K x 8) High Performance CMOS EPROM
	NM27C512Q120	105Kb / 10P	524,288-Bit (64K x 8) High Performance CMOS EPROM
	NM27C512Q150	105Kb / 10P	524,288-Bit (64K x 8) High Performance CMOS EPROM
	NM27C512Q90	105Kb / 10P	524,288-Bit (64K x 8) High Performance CMOS EPROM
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Descripción similar - NM27C512Q200

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Fairchild Semiconductor	FM27C512	97Kb / 10P	524,288-Bit (64K x 8) High Performance CMOS EPROM
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	NM27C512	105Kb / 10P	524,288-Bit (64K x 8) High Performance CMOS EPROM
National Semiconductor ...	NM27P512	176Kb / 12P	524,288-Bit (64K x 8) Processor Oriented CMOS EPROM
Fairchild Semiconductor	NM27C210	101Kb / 10P	1,048,576-Bit (64K x 16) High Performance CMOS EPROM
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NXP Semiconductors	27HC641	273Kb / 8P	64K BIT CMOS EPROM (8K X 8) November 12 1990
NXP Semiconductors	27C64A	528Kb / 14P	64K-bit CMOS EPROM(8K x 8) November 12 1990
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Microchip Technology	27C64	126Kb / 10P	64K (8K x 8) CMOS EPROM 2004

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NM27C512Q200 Datasheet(PDF) 3 Page - National Semiconductor (TI)

NM27C512Q200 Datasheet(HTML) 3 Page - National Semiconductor (TI)

Número de pieza similar - NM27C512Q200

Descripción similar - NM27C512Q200

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