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CYT4DNJBJS Datasheet(PDF) 141 Page - Infineon Technologies AG

No. de pieza CYT4DNJBJS
Descripción Electrónicos  TRAVEO™ T2G 32-bit Automotive MCU Based on Arm® Cortex®-M7 dual
PDF  209 Pages
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Fabricante Electrónico  INFINEON [Infineon Technologies AG]
Página de inicio  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

CYT4DNJBJS Datasheet(HTML) 141 Page - Infineon Technologies AG

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Datasheet
141
002-24601 Rev. *I
2023-02-14
TRAVEO™ T2G 32-bit Automotive MCU
Based on Arm® Cortex®-M7 dual
Electrical specifications
SID262
tSECTORE-
RASE4
Sector erase time
(work-flash, 128 B)
–5
15
ms Includes internal
preprogramming time
SID263
tWRITE1
64-bit write time (code-flash)
–
30
60
µs
Excludes system
overhead time
SID264
tWRITE2
256-bit write time
(code-flash)
–40
70
µs
Excludes system
overhead time
SID265
tWRITE3
4096-bit write time
(code-flash)
–
320 1200
µs
Excludes system
overhead time
SID266
tWRITE4
32-bit write time (work-flash)
–
30
60
µs
Excludes system
overhead time
SID267
tFRET1
Code-flash retention.
1000 program/erase cycles
20
–
–
years Temperature at
write/erase time.
TA ≤ +85°C average
SID182T1 tFRET2
Code-flash retention.
100 program/erase cycles
50
–
–
years Temperature at
write/erase time.
TA ≤ +30°C average
SID268
tFRET3
Work-flash retention.
125,000 program/erase
cycles
20
–
–
years Temperature at
write/erase time.
TA ≤ +85°C average
SID269
tFRET4
Work-flash retention.
250,000 program/erase
cycles
10
–
–
years Temperature at
write/erase time.
TA ≤ +85°C average
SID182T2 tFRET5
Work-flash retention.
1000 program/erase cycles
50
–
–
years Temperature at
write/erase time.
TA ≤ +30°C average
SID612
ICC_ACT2
Program operating current
(code or work-flash)
–15
62
mA VDDD = 5 V, VCCD = 1.1 V
Guaranteed by design
SID613
ICC_ACT3
Erase operating current
(code- or work-flash)
–15
62
mA VDDD = 5 V, VCCD = 1.1 V
Guaranteed by design
Table 26-14
Flash AC specifications (continued)
Spec ID
Parameter
Description
Min
Typ Max Units
Details/conditions



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