STM32U535NET3QTR datasheet(142/278 Pages) STMICROELECTRONICS

142 / 278 page

IDD

(Run)

Supply

current in

Run mode

fHCLK = fPLL = 160 MHz,

PLL on HSE 16 MHz in bypass

mode,

all peripherals disabled,

Flash bank 2 in power down,

all SRAMs enabled

Range 1

Reduced Code

13.00

81.25

µA/

MHz

CoreMark

13.00

81.25

SecureMark

14.00

87.50

Dhrystone 2.1

13.50

84.38

Fibonacci

10.50

65.63

While

9.65

9.70

60.31

60.63

fHCLK = fPLL = 110 MHz,

PLL on HSE 16 MHz in bypass

mode,

all peripherals disabled,

Flash bank 2 in power down,

all SRAMs enabled

Range 2

Reduced Code

8.30

8.35

75.45

75.91

CoreMark

8.25

8.30

75.00

75.45

SecureMark

9.05

9.10

82.27

82.73

Dhrystone 2.1

8.75

8.80

79.55

80.00

Fibonacci

6.60

6.65

60.00

60.45

While

6.20

6.25

56.36

56.82

fHCLK = fHSE = 55 MHz,

all peripherals disable,

Flash bank 2 in power down,

all SRAMs enabled

Range 3

Reduced Code

4.00

4.05

72.73

73.64

CoreMark

3.95

4.00

4.05

71.82

72.73

73.64

SecureMark

4.35

4.40

79.09

80.00

Dhrystone 2.1

4.20

4.25

76.36

77.27

Fibonacci

3.10

3.15

3.20

56.36

57.27

58.18

While

2.85

2.90

2.95

51.82

52.73

53.64

1. The current consumption from SRAM is similar.

Table 40. Typical current consumption in Run mode on LDO, with different codes

running from flash memory, ICACHE ON (1-way), prefetch ON(1) (continued)

Parameter

Conditions

Typ

Unit

Typ

Unit

Voltage

scaling

Code

1.8 V

3 V

3.3 V

1.8 V

3 V

3.3 V

STM32U535NET3QTR Datasheet(PDF) 142 Page - STMicroelectronics

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