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STM32U545NET3QTR Datasheet(PDF) 230 Page - STMicroelectronics

No. de pieza STM32U545NET3QTR
Descripción Electrónicos  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, 512 KB flash memory, 274 KB SRAM, crypto
PDF  283 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32U545NET3QTR Datasheet(HTML) 230 Page - STMicroelectronics

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Electrical characteristics
STM32U545xx
230/283
DS14216 Rev 1
PSRR
DC VDDA supply rejection
ratio
Normal mode DAC output buffer
ON
CL ≤ 50 pF, RL = 5 kΩ
--80
-28
dB
tSAMP
Sampling time in sample
and hold mode,
CSH = 100 nF
(code transition between
the lowest input code and
the highest input code
when DACOUT reaches
the final value ±1 LSB)
DAC_OUT
pin
connected
DAC output buffer
ON, CSH = 100 nF
-0.7
1.9
ms
DAC output buffer
OFF, CSH =
100 nF
-10.5
15
DAC_OUT
pin not
connected
(internal
connection
only)
DAC output buffer
OFF
-2
8
µs
Ileak
Output leakage current
-
-
-
(3)
nA
CIint
Internal sample and hold
capacitor
-7
9.2
11
pF
tTRIM
Middle code offset trim time DAC output buffer ON
50
-
-
µs
Voffset
Middle code offset for
1 trim code step
VREF+ = 3.6 V
-
1520
-
µV
VREF+ = 1.6 V
-
680
-
IDDA(DAC)
DAC consumption
from VDDA
DAC output
buffer ON
No load, middle
code (0x800)
-
330
510
µA
No load, worst
code (0xF1C)
-
470
680
DAC output
buffer OFF
No load,
middle/worst code
(0x800)
--
0.3
Sample and hold mode,
CSH = 100 nF
-
330 × TON
/(TON +
TOFF)
(4)
680 × TON
/(TON +
TOFF)
(4)
Table 113. DAC characteristics(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit



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