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STM32U545NET3QTR Datasheet(PDF) 175 Page - STMicroelectronics

No. de pieza STM32U545NET3QTR
Descripción Electrónicos  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, 512 KB flash memory, 274 KB SRAM, crypto
PDF  283 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32U545NET3QTR Datasheet(HTML) 175 Page - STMicroelectronics

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Table 69. Current consumption in Shutdown mode
Symbol
Parameter
Conditions
Typ
Max(1)
Unit
-VDD (V) 25°C 55°C 85°C 105°C 125°C 25°C
55°C
85°C
105°C 125°C
IDD(Shutdown)
Supply current in
Shutdown mode (backup
registers retained),
RTC disabled
-
1.8
0.09
0.49
2.35
6.25
16.00
0.22
1.30
5.90
16.00
40.00
µA
2.4
0.12
0.55
2.50
6.60
17.00
0.29
1.40
6.30
17.00
43.00
3.0
0.20
0.75
3.00
7.50
18.50
0.49
1.90
7.50
19.00
47.00
3.3
0.40
1.15
3.80
8.85
21.00
0.99
2.90
9.50
23.00
53.00
3.6
0.97
2.10
5.50
11.50 25.00
2.50
5.30
14.00
29.00
63.00
IDD(Shutdown
with RTC)
Supply current in
Shutdown mode (backup
registers retained),
RTC enabled
RTC(2) clocked by
LSE bypassed at
32768 Hz
1.8
0.32
0.75
2.70
6.90
18.50
0.48
1.60
6.30
17.00
43.00
2.4
0.40
0.86
2.90
7.25
19.00
0.61
1.80
6.70
18.00
45.00
3.0
0.56
1.15
3.50
8.25
21.50
0.89
2.40
8.10
20.00
50.00
3.3
0.80
1.60
4.35
9.65
24.00
1.50
3.40
11.00
24.00
56.00
3.6
1.45
2.60
6.20 12.50 28.50
3.00
5.80
15.00
30.00
67.00
RTC(2) clocked by
LSE quartz in low-
drive mode
1.8
0.44
0.88
2.85
6.85
17.00
-
-
-
-
-
2.4
0.49
0.97
3.00
7.25
17.50
-
-
-
-
-
3.0
0.59
1.20
3.55
8.20
19.50
-
-
-
-
-
3.3
0.80
1.60
4.35
9.55
22.00
-
-
-
-
-
3.6
1.40
2.55
6.15 12.00 26.00
-
-
-
-
-
1. Evaluated by characterization. Not tested in production.
2. RTC with default configuration but RTC_CALR.LPCAL = 1.
Table 70. Current consumption during wake-up from Shutdown mode
Symbol
Parameter
Conditions
Typ
Unit
-VDD (V)
25°C
QDD(wakeup from Shutdown)
Electrical charge consumed during wake-up
from Shutdown mode
Wake-up clock is MSI 4 MHz
3.0
3.75
μAs



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