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STM32U535NET6QTR Datasheet(PDF) 146 Page - STMicroelectronics

No. de pieza STM32U535NET6QTR
Descripción Electrónicos  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, up to 512 KB flash memory, 274 KB SRAM
PDF  278 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32U535NET6QTR Datasheet(HTML) 146 Page - STMicroelectronics

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Table 44. Current consumption in Sleep mode on SMPS, flash memory in power down
Parameter
Conditions
Typ at VDD = 1.8 V
Max at 1.71 V ≤ VDD ≤ 3.6 V(1) (2)
Unit
-
Voltage
scaling
fHCLK
(MHz)
25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
IDD
(Sleep)
Supply
current in
Sleep mode
fHCLK = fMSI,
all peripherals disabled
Range 4
24
0.25
0.30
0.60
0.99
1.75
0.35
0.54
1.30
2.60
4.80
mA
16
0.18
0.25
0.48
0.92
1.65
0.28
0.49
1.20
2.50
4.70
12
0.16
0.22
0.42
0.89
1.65
0.25
0.46
1.10
2.50
4.70
4
0.07
0.14
0.33
0.80
1.55
0.16
0.37
0.97
2.40
4.60
2
0.06
0.13
0.33
0.78
1.50
0.14
0.35
0.96
2.40
4.50
1
0.05
0.12
0.32
0.77
1.50
0.13
0.34
0.96
2.30
4.50
0.4
0.04
0.11
0.32
0.77
1.50
0.12
0.33
0.95
2.30
4.50
0.1
0.04
0.11
0.32
0.76
1.50
0.12
0.33
0.95
2.30
4.50
fHCLK = PLL on HSE 16 MHz
in bypass mode,
all peripherals disabled
Range 1
160
3.30
3.50
4.00
4.75
6.15
3.90
4.50
6.00
9.10
15.00
140
2.95
3.15
3.70
4.45
5.80
3.50
4.10
5.70
8.80
14.00
120
2.60
2.80
3.35
4.10
5.45
3.10
3.70
5.30
8.40
14.00
Range 2
110
2.10
2.25
2.65
3.25
4.30
2.50
2.90
4.10
6.40
11.00
72
1.55
1.70
2.10
2.70
3.75
1.90
2.30
3.50
5.80
9.60
64
1.45
1.60
2.00
2.55
3.65
1.80
2.20
3.40
5.60
9.50
fHCLK = fHSE bypass mode,
all peripherals disabled
Range 3
55
0.96
1.05
1.40
1.85
2.70
1.20
1.50
2.40
4.10
6.90
32
0.70
0.81
1.10
1.60
2.45
0.87
1.20
2.10
3.80
6.70
1. Evaluated by characterization. Not tested in production.
2. The maximum value is at VDD = 1.71 V in Sleep mode on SMPS.



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