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2N2222 Datasheet(PDF) 4 Page - NXP Semiconductors

No. de pieza 2N2222
Descripción Electrónicos  NPN switching transistors
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

2N2222 Datasheet(HTML) 4 Page - NXP Semiconductors

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1997 May 29
4
Philips Semiconductors
Product specification
NPN switching transistors
2N2222; 2N2222A
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
2N2222
IE = 0; VCB =50V
10
nA
IE = 0; VCB = 50 V; Tamb = 150 °C
10
µA
ICBO
collector cut-off current
2N2222A
IE = 0; VCB =60V
10
nA
IE = 0; VCB = 60 V; Tamb = 150 °C
10
µA
IEBO
emitter cut-off current
IC = 0; VEB =3V
10
nA
hFE
DC current gain
IC = 0.1 mA; VCE =10V
35
IC = 1 mA; VCE =10V
50
IC = 10 mA; VCE =10V
75
IC = 150 mA; VCE = 1 V; note 1
50
IC = 150 mA; VCE = 10 V; note 1
100
300
hFE
DC current gain
IC = 10 mA; VCE = 10 V; Tamb = −55 °C
2N2222A
35
hFE
DC current gain
IC = 500 mA; VCE = 10 V; note 1
2N2222
30
2N2222A
40
VCEsat
collector-emitter saturation voltage
2N2222
IC = 150 mA; IB = 15 mA; note 1
400
mV
IC = 500 mA; IB = 50 mA; note 1
1.6
V
VCEsat
collector-emitter saturation voltage
2N2222A
IC = 150 mA; IB = 15 mA; note 1
300
mV
IC = 500 mA; IB = 50 mA; note 1
1V
VBEsat
base-emitter saturation voltage
2N2222
IC = 150 mA; IB = 15 mA; note 1
1.3
V
IC = 500 mA; IB = 50 mA; note 1
2.6
V
VBEsat
base-emitter saturation voltage
2N2222A
IC = 150 mA; IB = 15 mA; note 1
0.6
1.2
V
IC = 500 mA; IB = 50 mA; note 1
2V
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
8pF
Ce
emitter capacitance
IC =ic = 0; VEB = 500 mV; f = 1 MHz
2N2222A
25
pF
fT
transition frequency
IC = 20 mA; VCE = 20 V; f = 100 MHz
2N2222
250
MHz
2N2222A
300
MHz
F
noise figure
IC = 200 µA; VCE =5V; RS =2kΩ;
f = 1 kHz; B = 200 Hz
2N2222A
4dB


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