1997 May 29

3

Philips Semiconductors

Product specification

NPN switching transistors

2N2222; 2N2222A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

2N2222

−

60

V

2N2222A

−

75

V

collector-emitter voltage

open base

2N2222

−

30

V

2N2222A

−

40

V

emitter-base voltage

open collector

2N2222

−

5V

2N2222A

−

6V

collector current (DC)

−

800

mA

peak collector current

−

800

mA

peak base current

−

200

mA

total power dissipation

−

500

mW

−

1.2

W

storage temperature

−65

+150

°C

junction temperature

−

200

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

in free air

350

K/W

thermal resistance from junction to case

146

K/W